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CORC

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High Performance Metal-Gate/High-kappa GaN MOSFET With Good Reliability for Both Logic and Power Applications 期刊论文
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2016
Yi, Shih-Han; Ruan, Dun-Bao; Di, Shaoyan; Liu, Xiaoyan; Wu, Yung Hsien; Chin, Albert
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/04
Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 卷号: 30, 页码: -
作者:  Wang, Qingpeng;  Jiang, Ying;  Zhang, Jiaqi;  Kawaharada, Kazuya;  Li, Liuan
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/09
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文
ieee electron device letters, 2014
Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Jin, Chunyan; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask 期刊论文
ieee electron device letters, 2014
Xu, Zhe; Wang, Jinyan; Liu, Jingqian; Jin, Chunyan; Cai, Yong; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT 期刊论文
ieee electron device letters, 2014
Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Yang, Zhen; Li, Xiaoping; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10
300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio 期刊论文
electronics letters, 2014
Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Yang, Zhen; Li, Xiaoping; Wang, Maojun; Yang, Zhenchuang; Xie, Bin; Yu, Min; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 12, 页码: 1200-1202
作者:  Cai, Y (蔡勇)
收藏  |  浏览/下载：33/0  |  提交时间：2015/02/03
Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 12, 页码: 1197-1199
作者:  Cai, Y (蔡勇)
收藏  |  浏览/下载：17/0  |  提交时间：2015/02/03
300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio 期刊论文
ELECTRONICS LETTERS, 2014, 卷号: 50, 期号: 4, 页码: 315-U161
作者:  Cai, Y (蔡勇)
收藏  |  浏览/下载：15/0  |  提交时间：2015/02/03
Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs (EI收录) 期刊论文
Electronics Letters, 2014, 卷号: 50, 页码: 1980-1982
作者:  Liu, Jingqian[1];  Wang, Jinyan[1];  Xu, Zhe[1];  Jiang, Haisang[1];  Yang, Zhenchuan[1]
收藏  |  浏览/下载：6/0  |  提交时间：2019/04/25

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