Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage   Current and 10(12) ON/OFF Current Ratio

doi:10.1109/LED.2014.2360541

CORC > 北京大学 > 信息科学技术学院

	Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio
	Xu, Zhe ; Wang, Jinyan ; Cai, Yong ; Liu, Jingqian ; Jin, Chunyan ; Yang, Zhenchuan ; Wang, Maojun ; Yu, Min ; Xie, Bing ; Wu, Wengang ; Ma, Xiaohua ; Zhang, Jincheng ; Hao, Yue
刊名	ieee electron device letters
	2014
关键词	Post-gate annealing (PGA) GaN enhancement mode MOSFET ON/OFF current ratio mesa isolation current GAN MIS-HEMTS AL2O3/GAN MOSFET INTERFACE
DOI	10.1109/LED.2014.2360541
英文摘要	Postgate annealing (PGA) in N-2/O-2 atmosphere at 300 degrees C for various annealing time is performed on enhancement mode AlGaN/GaN MOSFET fabricated using a self-terminating gate recess etching technique. After 45-min annealing, the device OFF-state leakage current decreases by more than two orders of magnitude and thus a low OFF-state leakage current of similar to 10(-13) A/mm is obtained at room temperature, resulting in an excellent ON/OFF current ratio of similar to 10(12). At 250 degrees C, the device still exhibits a low OFF-state leakage current of similar to 10(-9) A/mm and high ON/OFF current ratio of similar to 10(8). Meanwhile, a strong correlation between the OFF-state leakage current and mesa isolation current is observed as we change the annealing time: 1) the lower the mesa isolation current and 2) the lower the OFF-state leakage current and thus the higher the ON/OFF current ratio. It is the suppression of the mesa isolation current owing to the passivation of atomic layer deposition Al2O3 that leads to the improvement of the OFF-state leakage current and ON/OFF current ratio after PGA. Besides, the device shows no obvious change in terms of its threshold voltage and maximum drain current after PGA.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000345575400013&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 9; ARTICLE; jywang@ime.pku.edu.cn; ycai2008@sinano.ac.cn; wuwg@pku.edu.cn; 12; 1200-1202; 35
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/151962]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Zhe,Wang, Jinyan,Cai, Yong,et al. Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio[J]. ieee electron device letters,2014.
APA	Xu, Zhe.,Wang, Jinyan.,Cai, Yong.,Liu, Jingqian.,Jin, Chunyan.,...&Hao, Yue.(2014).Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio.ieee electron device letters.
MLA	Xu, Zhe,et al."Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio".ieee electron device letters (2014).