Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN   Cap Layer as Recess Mask

doi:10.1109/LED.2014.2359986

CORC > 北京大学 > 信息科学技术学院

	Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask
	Xu, Zhe ; Wang, Jinyan ; Liu, Jingqian ; Jin, Chunyan ; Cai, Yong ; Yang, Zhenchuan ; Wang, Maojun ; Yu, Min ; Xie, Bing ; Wu, Wengang ; Ma, Xiaohua ; Zhang, Jincheng ; Hao, Yue
刊名	ieee electron device letters
	2014
关键词	Self-terminating normally-off AlGaN/GaN MOSFET GaN cap layer gate recess recess mask MODE TRANSISTORS INTERFACE HFET
DOI	10.1109/LED.2014.2359986
英文摘要	Based on our proposed self-terminating gate recess etching technique, normally-off recess-gated AlGaN/GaN MOSFET has been demonstrated with a novel method using GaN cap layer (CL) as recess mask, which, as a result, simplifies the device fabrication process and lowers the fabrication cost. The GaN CL is capable of acting as an effective recess mask for the gate recess process, which includes a thermal oxidation for 45 min at 650 degrees C followed by 4-min etching in potassium hydroxide (KOH) at 70 degrees C. After gate recess process, no obvious change is observed in terms of the surface morphology of the GaN CL, the contact resistance of the Ohmic contact formed directly on the GaN CL as well as the sheet resistance of the two-dimensional electron gas (2-DEG) channel layer under the GaN CL. The fabricated device exhibits a threshold voltage (V-th) as high as 5 V, a maximum drain current (I-dmax) of similar to 200 mA/mm, a high ON/OFF current ratio of similar to 10(10) together with a low forward gate leakage current of similar to 10(-5) mA/mm. Meanwhile, the OFF-state breakdown voltage (V-br) of the device with gate-drain distance of 6 mu m is 450 V.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000345575400012&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 9; ARTICLE; jywang@ime.pku.edu.cn; wuwg@pku.edu.cn; 12; 1197-1199; 35
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/151961]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Zhe,Wang, Jinyan,Liu, Jingqian,et al. Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask[J]. ieee electron device letters,2014.
APA	Xu, Zhe.,Wang, Jinyan.,Liu, Jingqian.,Jin, Chunyan.,Cai, Yong.,...&Hao, Yue.(2014).Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask.ieee electron device letters.
MLA	Xu, Zhe,et al."Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask".ieee electron device letters (2014).