High Performance Metal-Gate/High-kappa GaN MOSFET With Good Reliability   for Both Logic and Power Applications

doi:10.1109/JEDS.2016.2594837

CORC > 北京大学 > 信息科学技术学院

	High Performance Metal-Gate/High-kappa GaN MOSFET With Good Reliability for Both Logic and Power Applications
	Yi, Shih-Han ; Ruan, Dun-Bao ; Di, Shaoyan ; Liu, Xiaoyan ; Wu, Yung Hsien ; Chin, Albert
刊名	IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
	2016
关键词	GaN MOSFET high-kappa reliability interface ELECTRON-MOBILITY TRANSISTORS INSULATOR
DOI	10.1109/JEDS.2016.2594837
英文摘要	The gate-recessed GaN MOSFET on a Si substrate is demonstrated to achieve a record highest normalized transistor current (mu C-ox) of 335 mu A/V-2 (410 mA/mm at L-G = 5 mu m and only V-G = 4 V), I-ON/I-OFF of 9 orders of magnitude, small 79 mV/dec sub-threshold slope, a low oxide/GaN interface trap density of 1.2 x 10(10) eV(-1)/cm(2), a low on-resistance of 17.0 Omega-mm, a high breakdown voltage of 720-970 V, and excellent reliability of only 40 mV Delta V-T after 175 degrees C 1000 s stress at maximum drive current. Such excellent device integrities are due to the high-kappa gate dielectric and the high conduction band offset (Delta E-C) of SiO2/GaN. From the calculation results of self-consistent Schrodinger and Poisson equations, the good reliability of GaN MOSFET is related to the confined carrier density within the GaN channel, which is in sharp contrast to the strong wave-function penetration into the high-trap density AlGaN barrier in the AlGaN/GaN HEMT.; Ministry of Science and Technology of Taiwan; SCI(E); EI; ARTICLE; albert_achin@hotmail.com; 5; 246-252; 4
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/491444]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yi, Shih-Han,Ruan, Dun-Bao,Di, Shaoyan,et al. High Performance Metal-Gate/High-kappa GaN MOSFET With Good Reliability for Both Logic and Power Applications[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2016.
APA	Yi, Shih-Han,Ruan, Dun-Bao,Di, Shaoyan,Liu, Xiaoyan,Wu, Yung Hsien,&Chin, Albert.(2016).High Performance Metal-Gate/High-kappa GaN MOSFET With Good Reliability for Both Logic and Power Applications.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY.
MLA	Yi, Shih-Han,et al."High Performance Metal-Gate/High-kappa GaN MOSFET With Good Reliability for Both Logic and Power Applications".IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2016).