300 degrees C operation of normally-off AlGaN/GaN MOSFET with low   leakage current and high on/off current ratio

doi:10.1049/el.2013.3928

CORC > 北京大学 > 信息科学技术学院

	300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio
	Xu, Zhe ; Wang, Jinyan ; Cai, Yong ; Liu, Jingqian ; Yang, Zhen ; Li, Xiaoping ; Wang, Maojun ; Yang, Zhenchuang ; Xie, Bin ; Yu, Min ; Wu, Wengang ; Ma, Xiaohua ; Zhang, Jincheng ; Hao, Yue
刊名	electronics letters
	2014
关键词	CIRCUITS HEMTS
DOI	10.1049/el.2013.3928
英文摘要	300??C operation of a normally-off AlGaN/GaN metal-oxide semiconductor field-effect transistor (MOSFET) is successfully demonstrated, which is fabricated using a self-terminating gate recess etching technique. At 300??C, by employing a 15 nm-thick Al2O3 as the gate dielectric deposited by atomic layer deposition, the fabricated normally-off MOSFET exhibits a threshold voltage (Vth) of 3.2 V, a low off-state leakage current of ??10-7 A/mm and a low forward gate leakage current of ??10-7 A/mm. Thus, a high on/off current ratio of ?? 10 6 is obtained. Furthermore, the normally-off MOSFET also exhibits small variations in terms of its Vth from room temperature to 300??C with a maximum relative variation of 6.7% in a such temperature range. These results make this normally-off AlGaN/GaN MOSFET very promising for high-temperature digital electronics. ? The Institution of Engineering and Technology 2014.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000331405200046&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 0; ARTICLE; wangjinyan@pku.edu.cn; 4; 315-U161; 50
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291653]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xu, Zhe,Wang, Jinyan,Cai, Yong,et al. 300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio[J]. electronics letters,2014.
APA	Xu, Zhe.,Wang, Jinyan.,Cai, Yong.,Liu, Jingqian.,Yang, Zhen.,...&Hao, Yue.(2014).300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio.electronics letters.
MLA	Xu, Zhe,et al."300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio".electronics letters (2014).