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y Efficacy and Safety of Serenoa repens Extract Among Patients with Benign Prostatic Hyperplasia in China: A Multicenter, Randomized, Double-blind, Placebo-controlled Trial 期刊论文
UROLOGY, 2019, 卷号: 129
作者:  Ye, Zhangqun;  Huang, Jian;  Zhou, Liqun;  Chen, Shan;  Wang, Zengjun
收藏  |  浏览/下载：47/0  |  提交时间：2019/12/04
^125I粒子串近程放射治疗兔植入性门静脉主干癌栓实验研究 期刊论文
介入放射学杂志, 2017, 卷号: 26, 期号: 8
作者:  陶赟(1,2);  李文会(3);  刘清欣(1,2);  罗剑钧(1,2);  张雯(1,2)
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/05
腔内超声辅助下经颈静脉肝内门体分流术1例 期刊论文
介入放射学杂志, 2017, 卷号: 26, 期号: 3
作者:  马婧嵌;  颜志平;  罗剑钧;  刘清欣;  刘凌晓
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/05
Locally non-uniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure 期刊论文
ELECTRONICS LETTERS, 2015
Liu, Jingqian; Wang, Jinyan; Xu, Zhe; Jiang, Haisang; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
GAN  SURFACE  HEMTS  
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文
ieee electron device letters, 2014
Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Jin, Chunyan; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask 期刊论文
ieee electron device letters, 2014
Xu, Zhe; Wang, Jinyan; Liu, Jingqian; Jin, Chunyan; Cai, Yong; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT 期刊论文
ieee electron device letters, 2014
Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Yang, Zhen; Li, Xiaoping; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10
Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs 期刊论文
electronics letters, 2014
Liu, Jingqian; Wang, Jinyan; Xu, Zhe; Jiang, Haisang; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13
300 degrees C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio 期刊论文
electronics letters, 2014
Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Yang, Zhen; Li, Xiaoping; Wang, Maojun; Yang, Zhenchuang; Xie, Bin; Yu, Min; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13
Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs (EI收录) 期刊论文
Electronics Letters, 2014, 卷号: 50, 页码: 1980-1982
作者:  Liu, Jingqian[1];  Wang, Jinyan[1];  Xu, Zhe[1];  Jiang, Haisang[1];  Yang, Zhenchuan[1]
收藏  |  浏览/下载：6/0  |  提交时间：2019/04/25

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