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科研机构
半导体研究所 [12]
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会议论文 [12]
发表日期
2011 [3]
2006 [1]
2004 [3]
2003 [1]
2002 [1]
2000 [3]
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学科主题
半导体材料 [12]
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学科主题:半导体材料
内容类型:会议论文
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Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
会议论文
16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010
Pan X (Pan Xu)
;
Wei M (Wei Meng)
;
Yang CB (Yang Cuibai)
;
Xiao HL (Xiao Hongling)
;
Wang CM (Wang Cuimei)
;
Wang XL (Wang Xiaoliang)
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2011/07/26
Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate
会议论文
3rd international photonics and optoelectronics meetings, wuhan, peoples r china, nov 02-05, 2010
Wei M (Wei Meng)
;
Wang XL (Wang Xiaoliang)
;
Pan X (Pan Xu)
;
Xiao HL (Xiao Hongling)
;
Wang CM (Wang Cuimei)
;
Zhang ML (Zhang Minglan)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2011/07/26
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
会议论文
16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010
阎Zhou HY (Zhou Huiying)
;
Qu SC (Qu Shengchun)
;
Jin P (Jin Peng)
;
Xu B (Xu Bo)
;
Ye XL (Ye Xiaoling)
;
Liu JP (Liu Junpeng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2011/07/26
Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
作者:
Ye XL
;
Jin P
;
Xu B
收藏
  |  
浏览/下载:119/42
  |  
提交时间:2010/03/29
lateral intersubband photocurrent
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003
作者:
Ye XL
;
Xu B
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
SHORT-PERIOD SUPERLATTICES
RAMAN-SCATTERING
QUANTUM-WELLS
GROWTH
ROUGHNESS
SEGREGATION
ALAS/GAAS
ALAS
GAAS
Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者:
Xu B
;
Ye XL
;
Jin P
收藏
  |  
浏览/下载:92/22
  |  
提交时间:2010/03/29
DOTS
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者:
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:82/12
  |  
提交时间:2010/03/29
1.3 MU-M
Growth and photoluminescence of InAlGaN films
会议论文
5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003
作者:
Li DB
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  |  
浏览/下载:13/2
  |  
提交时间:2010/10/29
MULTIPLE-QUANTUM WELLS
QUATERNARY ALLOYS
OPTICAL-PROPERTIES
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
作者:
Xu B
;
Ye XL
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
reflectance-difference spectroscopy
indium segregation
InGaAs/GaAs quantum wells
EPITAXY-GROWN INGAAS/GAAS
SURFACE SEGREGATION
INTERFACE
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition
会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
Sun XL
;
Wang YY
;
Yang H
;
Li JB
;
Zheng LX
;
Xu DP
;
Wang ZG
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
metalorganic chemical vapor deposition
cubic GaN
hexagonal phase content
4-circle X-ray double crystal diffraction
MOLECULAR-BEAM EPITAXY
GALLIUM NITRIDE
THIN-FILMS
SILICON
GAAS
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