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	Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures
	Ye XL; Jin P; Xu B
	2006
会议名称	2nd asian conference on nanoscience and nanotechnology
会议日期	nov 24-27, 2004
会议地点	beijing, peoples r china
关键词	lateral intersubband photocurrent
页码	vol 5 no 6 5 (6): 729-735
通讯作者	lei, w, acad sinica, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china.
中文摘要	we present lateral intersubband photocurrent (pc) study on self-assembled inas/inaias/inp(001) nanostructures in normal incidence. with the help of interband excitation, a broad pc signal has been observed in the photon energy range of 150-630 mev arising from the bound-to-continuum intersubband absorption in the inas nanostructures. the large linewidth of the intersubband pc signal is due to the size inhomogeneity of the nanostructures. with the increase of the interband excitation the intersubband pc signal firstly increases with a redshift of pc peak and reaches its maximum, then decreases with no peak shift. the increase and redshift of the pc signal at low excitation level can be explained by the state filling effect. however, the decrease of pc signal at high excitation level may be due to the change of the mobility and lifetime of the electrons. the intersubband pc signal decreases when the temperature is increased, which can be explained by the decrease of the mobility and lifetime of the electrons and the thermal escape of electrons.
英文摘要	we present lateral intersubband photocurrent (pc) study on self-assembled inas/inaias/inp(001) nanostructures in normal incidence. with the help of interband excitation, a broad pc signal has been observed in the photon energy range of 150-630 mev arising from the bound-to-continuum intersubband absorption in the inas nanostructures. the large linewidth of the intersubband pc signal is due to the size inhomogeneity of the nanostructures. with the increase of the interband excitation the intersubband pc signal firstly increases with a redshift of pc peak and reaches its maximum, then decreases with no peak shift. the increase and redshift of the pc signal at low excitation level can be explained by the state filling effect. however, the decrease of pc signal at high excitation level may be due to the change of the mobility and lifetime of the electrons. the intersubband pc signal decreases when the temperature is increased, which can be explained by the decrease of the mobility and lifetime of the electrons and the thermal escape of electrons.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; acad sinica, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
收录类别	其他
会议录	international journal of nanoscience丛书标题: international journal of nanoscience series
会议录出版者	world scientific publ co pte ltd ; po box 128 farrer rd, singapore 9128, singapore
会议录出版地	po box 128 farrer rd, singapore 9128, singapore
学科主题	半导体材料
语种	英语
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9814]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ye XL,Jin P,Xu B. Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures[C]. 见:2nd asian conference on nanoscience and nanotechnology. beijing, peoples r china. nov 24-27, 2004.

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