Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry

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	Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
	Xu B; Ye XL
	2002
会议名称	9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix)
会议日期	sep 24-28, 2001
会议地点	rimini, italy
关键词	reflectance-difference spectroscopy indium segregation InGaAs/GaAs quantum wells EPITAXY-GROWN INGAAS/GAAS SURFACE SEGREGATION INTERFACE
页码	62-65
通讯作者	chen yh chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china.
中文摘要	the influence of the indium segregation on the interface asymmetry in ingaas/gaas quantum wells have been studied by reflectance-difference spectroscopy (rds). it is found that the anisotropy of the 2h1e (2hh --> 1e) transition is very sensitive to the degree of the interface asymmetry. calculations taking into account indium segregation yield good agreement with the observed anisotropy structures. it demonstrates that the anisotropy intensity ratio of the 1l1e (1lh --> 1e) and 2h1e transitions measured by rds can be used to characterize the interface asymmetry. (c) 2002 elsevier science b.v. all rights reserved.
英文摘要	the influence of the indium segregation on the interface asymmetry in ingaas/gaas quantum wells have been studied by reflectance-difference spectroscopy (rds). it is found that the anisotropy of the 2h1e (2hh --> 1e) transition is very sensitive to the degree of the interface asymmetry. calculations taking into account indium segregation yield good agreement with the observed anisotropy structures. it demonstrates that the anisotropy intensity ratio of the 1l1e (1lh --> 1e) and 2h1e transitions measured by rds can be used to characterize the interface asymmetry. (c) 2002 elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:12导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:12z (gmt). no. of bitstreams: 1 2873.pdf: 129007 bytes, checksum: c7776daebc5d00cc80b51b44568e2180 (md5) previous issue date: 2002; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议录	materials science and engineering b-solid state materials for advanced technology, 91
会议录出版者	elsevier science sa ; po box 564, 1001 lausanne, switzerland
会议录出版地	po box 564, 1001 lausanne, switzerland
学科主题	半导体材料
语种	英语
ISSN号	0921-5107
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14897]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B,Ye XL. Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry[C]. 见:9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix). rimini, italy. sep 24-28, 2001.