Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer

	Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
	Pan X (Pan Xu) ; Wei M (Wei Meng) ; Yang CB (Yang Cuibai) ; Xiao HL (Xiao Hongling) ; Wang CM (Wang Cuimei) ; Wang XL (Wang Xiaoliang)
	2011
会议名称	16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14)
会议日期	aug 08-13, 2010
会议地点	beijing, peoples r china
收录类别	CPCI（ISTP）
会议录	journal of crystal growth, 318 (1): 464-467
学科主题	半导体材料
语种	英语
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/21436]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Pan X ,Wei M ,Yang CB ,et al. Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer[C]. 见:16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14). beijing, peoples r china. aug 08-13, 2010.