The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

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	The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition
	Sun XL ; Wang YY ; Yang H ; Li JB ; Zheng LX ; Xu DP ; Wang ZG
	2000
会议名称	1st asian conference on chemical vapour deposition
会议日期	may 10-13, 1999
会议地点	shanghai, peoples r china
关键词	metalorganic chemical vapor deposition cubic GaN hexagonal phase content 4-circle X-ray double crystal diffraction MOLECULAR-BEAM EPITAXY GALLIUM NITRIDE THIN-FILMS SILICON GAAS
页码	237-240
通讯作者	sun xl chinese acad sci inst semicond natl res ctr optoelect technol beijing 100083 peoples r china.
中文摘要	cubic gan(c-gan) films are grown on gaas(001) substrates by metalorganic chemical vapor deposition (mocvd). two gan samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle x-ray double crystal diffraction (xrdcd) was used to study the secondary crystallographic phases presented in the c-gan films. the phase composition of the epilayers was determined by x-ray reciprocal space mapping. the intensities of the c-gan(002) and h-gan(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. the content of the hexagonal phase inclusions in the c-gan films was calculated to about 1.6 and 7.9%, respectively. the thicker buffer layer is not preferable for growing high quality pure c-gan films. (c) 2000 elsevier science s.a. all rights reserved.
英文摘要	cubic gan(c-gan) films are grown on gaas(001) substrates by metalorganic chemical vapor deposition (mocvd). two gan samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle x-ray double crystal diffraction (xrdcd) was used to study the secondary crystallographic phases presented in the c-gan films. the phase composition of the epilayers was determined by x-ray reciprocal space mapping. the intensities of the c-gan(002) and h-gan(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. the content of the hexagonal phase inclusions in the c-gan films was calculated to about 1.6 and 7.9%, respectively. the thicker buffer layer is not preferable for growing high quality pure c-gan films. (c) 2000 elsevier science s.a. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:23导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:23z (gmt). no. of bitstreams: 1 2949.pdf: 211211 bytes, checksum: 25f37659061179e1c278b245a64a76de (md5) previous issue date: 2000; chinese vacuum soc, thin films comm.; chinese electr soc, thin films comm.; nat sci fdn.; chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	chinese vacuum soc, thin films comm.; chinese electr soc, thin films comm.; nat sci fdn.
会议录	thin solid films, 368 (2)
会议录出版者	elsevier science sa ; po box 564, 1001 lausanne, switzerland
会议录出版地	po box 564, 1001 lausanne, switzerland
学科主题	半导体材料
语种	英语
ISSN号	0040-6090
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14977]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun XL,Wang YY,Yang H,et al. The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition[C]. 见:1st asian conference on chemical vapour deposition. shanghai, peoples r china. may 10-13, 1999.