Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate

	Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate
	Wei M (Wei Meng) ; Wang XL (Wang Xiaoliang) ; Pan X (Pan Xu) ; Xiao HL (Xiao Hongling) ; Wang CM (Wang Cuimei) ; Zhang ML (Zhang Minglan) ; Wang ZG (Wang Zhanguo)
	2011
会议名称	3rd international photonics and optoelectronics meetings
会议日期	nov 02-05, 2010
会议地点	wuhan, peoples r china
收录类别	CPCI（ISTP）
会议录	3rd international photonics and optoelectronics meetings (poem 2010), 276: art. no. 012094 2011
学科主题	半导体材料
语种	英语
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/21433]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Wei M ,Wang XL ,Pan X ,et al. Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate[C]. 见:3rd international photonics and optoelectronics meetings. wuhan, peoples r china. nov 02-05, 2010.