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LAMOST medium-resolution spectroscopic survey of binarity and exotic star (LAMOST-MRS-B): Observation strategy and target selection
期刊论文
CHINESE PHYSICS B, 2023, 卷号: 32, 期号: 1
作者:
Li, Jiao
;
Li JD(李江丹)
;
Guo YJ(郭彦君)
;
Han ZW(韩占文)
;
Chen XF(陈雪飞)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2023/01/30
surveys
spectroscopy
catalogs
binary
Molecular identification, diversity and functional characterization of fungal communities isolated from Stipa purpurea
期刊论文
South African Journal of Botany, 2022, 期号: 149, 页码: 117-123
作者:
Liu HY(柳皓月)
;
Jin H(金辉)
;
Yang XY(杨晓燕)
;
Xu ZX(许忠祥)
;
Cui ZT(崔增团)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2022/11/30
An Expectation Maximization based Adaptive Group Testing Method for Improving Efficiency and Sensitivity of Large-Scale Screening of COVID-19
期刊论文
IEEE Journal of Biomedical and Health Informatics, 2022, 卷号: 26, 期号: 2, 页码: 482-493
作者:
Xia XF(夏小芳)
;
Liu, Yang
;
Yang, Bo
;
Liu YF(刘英帆)
;
Cui JT(崔江涛)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2022/01/13
COVID-19 screening
search algorithms
group testing
expectation
efficiency
sensitivity
Detection Methods in Smart Meters for Electricity Thefts: A Survey
期刊论文
PROCEEDINGS OF THE IEEE, 2022, 页码: 1-47
作者:
Xia XF(夏小芳)
;
Xiao Y(肖杨)
;
Liang W(梁炜)
;
Cui JT(崔江涛)
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2022/02/04
Power systems
Companies
Meters
Smart grids
Meter reading
Electric variables measurement
Distribution networks
Binary trees
cyber-physical systems
detection methods
electricity theft
Internet of Things (IoT)
machine learning
measurement mismatch
security
smart grid
smart meters
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
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  |  
浏览/下载:37/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:
Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
;
He, CF (He, Chengfa) 1
;
Guo, Q (Guo, Qi) 1
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  |  
浏览/下载:38/0
  |  
提交时间:2021/12/06
Threshold voltage
TestingMOSFET circuits
Transistors
Standards
Logic gates
Fluctuations
Buried oxide (BOX)
silicon-on-insulator (SOI)
total ionizing dose (TID)
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
The Evolution of the Broadband Temporal Features Observed in the Black-hole Transient MAXI J1820+070 with Insight-HXMT
期刊论文
ASTROPHYSICAL JOURNAL, 2020, 卷号: 896, 期号: 1, 页码: 33
作者:
Wang, YN
;
Ji, L
;
Zhang, SN
;
Mendez, M
;
Qu, JL
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  |  
浏览/下载:96/0
  |  
提交时间:2020/09/27
Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566
作者:
Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
;
Cui, JW (Cui, Jiangwei)[ 1,2 ]
;
Zheng, QW (Zheng, Qiwen)[ 1,2 ]
;
Zhao, JH (Zhao, Jinghao)[ 1,2,3 ]
;
Yu, XF (Yu, Xuefeng)[ 1,2 ]
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2020/12/11
SiC MOSFET
total ionizing dose irradiation
time-dependent dielectric breakdown
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
收藏
  |  
浏览/下载:98/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
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