This paper presents an experimental study of the dynamic and static characteristics of SiC Power MOSFETs in a total ionizing dose radiation environment. Their relationship has also been studied. Furthermore, the factors and mechanisms that affect the switching characteristics of SiC Power MOSFET in a total dose radiation environment are discussed. The change of switching characteristics of SiC VDMOS induced by radiation depends not only on the trapped charge accumulated at the interface and gate oxide above the channel but is also strongly dependent on the parasitic capacitance of the device. The former causes the negative shift of the threshold voltage to decrease the turn-on time and increase the turn-off time, while the latter increases both the turn-on time and turn-off time. The results of the study show that the static and dynamic performance of SiC power MOSFET must be considered simultaneously in the total dose radiation damage assessment and radiation hardening. Namely, the static characteristic represented by the threshold voltage and the dynamic characteristic represented by the turn-off time.