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浏览/检索结果: 共16条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs 期刊论文 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429 作者:  Feng, HN (Feng, Haonan) [1] , [2] , [3];  Yang, S (Yang, Sheng) [1] , [2] , [3];  Liang, XW (Liang, Xiaowen) [1] , [2] , [3];  Zhang, D (Zhang, Dan) [1] , [2] , [3];  Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3] 收藏  |  浏览/下载：38/0  |  提交时间：2022/03/24 SiC Power MOSFETs  Switching Characteristics  Total Ionizing Dose (TID) Effect  Static Characteristic  Parasitic Capacitance   A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs 期刊论文 IEEE Transactions on Power Electronics, 2019, 卷号: 34, 页码: 2002-2006 作者:  Ren, Yu;  Yang, Xu;  Zhang, Fan;  Wang, Fei;  Tolbert, Leon M. 收藏  |  浏览/下载：33/0  |  提交时间：2019/11/19 Gate drivers  Integrated circuit reliability  MOS-FET  Series connections  SiC MOSFET  Solid State Circuit Breaker  Voltage balancing  Wide band gap devices   Temperature Dependence of Dynamic Performance Characterization of 1.2 kV SiC Power MOSFETs compared with Si IGBTs for Wide Temperature Applications 期刊论文 IEEE Transactions on Power Electronics, 2018 作者:  Qi, Jinwei;  Yang, Xu;  Li, Xin;  Tian, Kai;  Mao, Zhangsong 收藏  |  浏览/下载：10/0  |  提交时间：2019/11/19 Cryogenic temperatures  Dynamic resistance  High-efficiency power conversions  High-frequency applications  Power conversion systems  SiC MOSFET  Switching characterization  Temperature applications   Characterization of 1.2 kV 4H-SiC power MOSFETs and Si IGBTs at cryogenic and high temperatures 会议论文 作者:  Tian, Kai;  Qi, Jinwei;  Mao, Zhangsong;  Yang, Song;  Song, Wenjie 收藏  |  浏览/下载：6/0  |  提交时间：2019/11/19 Cryogenic temperatures  High temperature  Interface traps  Switching characteristics  Switching performance  Transfer characteristics  Trench mosfets  Wide temperature ranges   Dynamic Performance of 4H-SiC Power MOSFETs and Si IGBTs over Wide Temperature Range 会议论文 作者:  Qi, Jinwei;  Tian, Kai;  Mao, Zhangsong;  Yang, Song;  Song, Wenjie 收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26 MOSFETs  dynamic on-resistance  silicon carbide (SiC)  cryogenic temperature  switching transient   An Integrated Gate Driver with Active Delay Control Method for Series Connected SiC MOSFETs 期刊论文 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics, COMPEL 2018, 2018 作者:  Wang, Panrui;  Gao, Feng;  Jing, Yang;  Hao, Quanrui;  Li, Kejun 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/11 delay control  series connected  SiC MOSFET  voltage balance   An Insight into the Voltage Rising Behavior during Turn-off Process of Series Connected SiC MOSFETs on Circuit Level 期刊论文 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018, 2018, 页码: 3383-3389 作者:  Wang, Panrui;  Gao, Feng;  Jing, Yang;  Chen, Yufeng;  Zhang, Lei 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11 equivalent model  series connected  SiC MOSFET   A Model Parameter Optimization Method of SiC Power MOSFETs 会议论文 2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01 作者:  Yang, Yuan;  Wen, Yang;  Wang, Yan 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/20 SiC MOSFETs  PSpice model  Switching lossess   An Integrated Gate Driver with Active Delay Control Method for Series Connected SiC MOSFETs 会议论文 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL), JUN 25-28, 2018 作者:  Wang, Panrui;  Gao, Feng;  Jing, Yang;  Hao, Quanrui;  Li, Kejun 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/31 SiC MOSFET  series connected  voltage balance  delay control   An Insight into the Voltage Rising Behavior during Turn-off Process of Series Connected SiC MOSFETs on Circuit Level 会议论文 8th International Power Electronics Conference (IPEC-Niigata ECCE Asia), MAY 20-24, 2018 作者:  Wang, Panrui;  Gao, Feng;  Jing, Yang;  Chen, Yufeng;  Zhang, Lei 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31 equivalent model  series connected  SiC MOSFET