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科研机构
北京大学 [6]
物理研究所 [1]
微电子研究所 [1]
山东大学 [1]
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期刊论文 [9]
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2019 [1]
2018 [1]
2017 [2]
2016 [2]
2015 [1]
2014 [2]
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A Dual-Point Technique for the Entire I-D-V-G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 5, 页码: 670-674
作者:
Zhan, Xuepeng
;
Shen, Chengda
;
Ji, Zhigang
;
Chen, Jiezhi
;
Fang, Hui
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/12/11
Random telegraph noise(RTN)
reliability
bias temperature instability
time-dependent variability
Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory
期刊论文
IEEE Electron Device Letters, 2018
作者:
Gong TC(龚天成)
;
Xu XX(许晓欣)
;
Yu J(余杰)
;
Dong DN(董大年)
;
Lv HB(吕杭炳)
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2019/04/18
New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017
Chen, Cheng
;
Huang, Qianqian
;
Zhu, Jiadi
;
Zhao, Yang
;
Guo, Lingyi
;
Huang, Ru
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2017/12/03
Amplitude
annealing process
band-to-band tunneling (BTBT) generation rate
nonuniformity
random dopant fluctuation (RDF)
random telegraph noise (RTN)
source doping concentration
tunnel FET (TFET)
FIELD-EFFECT TRANSISTORS
RANDOM DOPANT FLUCTUATION
LINE-EDGE ROUGHNESS
1/F NOISE
ELECTRICAL NOISE
CMOS DEVICES
VARIABILITY
IMPACT
TFET
Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
期刊论文
SCIENTIFIC REPORTS, 2017
Guo, Shaofeng
;
Wang, Runsheng
;
Mao, Dongyuan
;
Wang, Yangyuan
;
Huang, Ru
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
DEFECTS
SIGNALS
Microscopic origin of read current noise in TaOx-based resistive switching memory by ultra-low temperature measurement
期刊论文
APPLIED PHYSICS LETTERS, 2016
Pan, Yue
;
Cai, Yimao
;
Liu, Yefan
;
Fang, Yichen
;
Yu, Muxi
;
Tan, Shenghu
;
Huang, Ru
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
RANDOM TELEGRAPH NOISE
DEVICE
OXIDES
RRAM
Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions
期刊论文
International Conference on Solid State Devices and Materials (SSDM), 2016
Li, Yun
;
Jiang, Hai
;
Lun, Zhiyuan
;
Wang, Yijiao
;
Huang, Peng
;
Hao, Hao
;
Du, Gang
;
Zhang, Xing
;
Liu, Xiaoyan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
OXIDE
MODEL
BIAS
DEGRADATION
TECHNOLOGY
DEFECTS
STACKS
NOISE
PBTI
HFO2
Impacts of Random Telegraph Noise (RTN) on Digital Circuits
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015
Luo, Mulong
;
Wang, Runsheng
;
Guo, Shaofeng
;
Wang, Jing
;
Zou, Jibin
;
Huang, Ru
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2017/12/03
Bit error rate (BER)
dynamic variability
failure probability
Monte Carlo simulation
oxide trap
random telegraph noise (RTN)
ring oscillator
signal integrity
SRAM
Low frequency noise peak near magnon emission energy in magnetic tunnel junctions
期刊论文
AIP ADVANCES, 2014, 卷号: 4, 期号: 12
Liu, L
;
Xiang, L
;
Guo, HQ
;
Wei, J
;
Li, DL
;
Yuan, ZH
;
Feng, JF
;
Han, XF
;
Coey, JMD
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2015/04/14
Investigation of Random Telegraph Noise in the Dark Current of Germanium Waveguide Photodetector
期刊论文
ieee journal of selected topics in quantum electronics, 2014
Tu, Zhijuan
;
Zhou, Zhiping
;
Wang, Xingjun
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2015/11/10
Detectors
germanium
noise measurement
optoelectronic devices
SOLID-STATE DEVICES
SILICON
PHOTONICS
MOSFETS
SIGNAL
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