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A Dual-Point Technique for the Entire I-D-V-G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 5, 页码: 670-674
作者:  Zhan, Xuepeng;  Shen, Chengda;  Ji, Zhigang;  Chen, Jiezhi;  Fang, Hui
收藏  |  浏览/下载：18/0  |  提交时间：2019/12/11
Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory 期刊论文
IEEE Electron Device Letters, 2018
作者:  Gong TC(龚天成);  Xu XX(许晓欣);  Yu J(余杰);  Dong DN(董大年);  Lv HB(吕杭炳)
收藏  |  浏览/下载：17/0  |  提交时间：2019/04/18
Comparative Study on RTN Amplitude in Planar and FinFET Devices 其他
2017-01-01
Zhang, Zexuan; Zhang, Zhe; Guo, Shaofeng; Wang, Runsheng; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
On the Physical Modeling of Random Telegraph Noise (RTN) Amplitude in Nanoscale MOSFETs: From Ideal to Statistical Devices 其他
2017-01-01
Zhang, Zexuan; Guo, Shaofeng; Zhang, Zhe; Wang, Runsheng; Huang, Ru
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03
New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017
Chen, Cheng; Huang, Qianqian; Zhu, Jiadi; Zhao, Yang; Guo, Lingyi; Huang, Ru
收藏  |  浏览/下载：9/0  |  提交时间：2017/12/03
Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps 期刊论文
SCIENTIFIC REPORTS, 2017
Guo, Shaofeng; Wang, Runsheng; Mao, Dongyuan; Wang, Yangyuan; Huang, Ru
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Impacts of random telegraph noise (RTN) on the Energy-Delay tradeoffs of logic circuits 其他
2016-01-01
Zhang, Yang; Jiang, Xiaobo; Wang, Junyao; Guo, Shaofeng; Fang, Yichen; Wang, Runsheng; Luo, Mulong; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
Microscopic origin of read current noise in TaOx-based resistive switching memory by ultra-low temperature measurement 期刊论文
APPLIED PHYSICS LETTERS, 2016
Pan, Yue; Cai, Yimao; Liu, Yefan; Fang, Yichen; Yu, Muxi; Tan, Shenghu; Huang, Ru
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Deep understanding of random telegraph noise (RTN) effects on SRAM stability 其他
2016-01-01
Mao, Dongyuan; Guo, Shaofeng; Wang, Runsheng; Luo, Mulong; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions 其他
2016-01-01
Li, Yun; Jiang, Hai; Lun, Zhiyuan; Wang, Yijiao; Huang, Peng; Hao, Hao; Du, Gang; Zhang, Xing; Liu, Xiaoyan
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03

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