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	A Dual-Point Technique for the Entire I-D-V-G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition
	Zhan, Xuepeng; Shen, Chengda; Ji, Zhigang; Chen, Jiezhi; Fang, Hui; Guo, Fangbin; Zhang, Jianfu
刊名	IEEE ELECTRON DEVICE LETTERS
	2019
卷号	40期号:5页码:670-674
关键词	Random telegraph noise(RTN) reliability bias temperature instability time-dependent variability
DOI	10.1109/LED.2019.2903516
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4530541
专题	山东大学
作者单位	Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Mersey
推荐引用方式 GB/T 7714	Zhan, Xuepeng,Shen, Chengda,Ji, Zhigang,et al. A Dual-Point Technique for the Entire I-D-V-G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition[J]. IEEE ELECTRON DEVICE LETTERS,2019,40(5):670-674.
APA	Zhan, Xuepeng.,Shen, Chengda.,Ji, Zhigang.,Chen, Jiezhi.,Fang, Hui.,...&Zhang, Jianfu.(2019).A Dual-Point Technique for the Entire I-D-V-G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition.IEEE ELECTRON DEVICE LETTERS,40(5),670-674.
MLA	Zhan, Xuepeng,et al."A Dual-Point Technique for the Entire I-D-V-G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition".IEEE ELECTRON DEVICE LETTERS 40.5(2019):670-674.

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