Impacts of Random Telegraph Noise (RTN) on Digital Circuits

doi:10.1109/TED.2014.2368191

CORC > 北京大学 > 信息科学技术学院

	Impacts of Random Telegraph Noise (RTN) on Digital Circuits
	Luo, Mulong ; Wang, Runsheng ; Guo, Shaofeng ; Wang, Jing ; Zou, Jibin ; Huang, Ru
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2015
关键词	Bit error rate (BER) dynamic variability failure probability Monte Carlo simulation oxide trap random telegraph noise (RTN) ring oscillator signal integrity SRAM
DOI	10.1109/TED.2014.2368191
英文摘要	Random telegraph noise (RTN) is one of the important dynamic variation sources in ultrascaled MOSFETs. In this paper, the recently focused ac trap effects of RTN in digital circuits and their impacts on circuit performance are systematically investigated. Instead of trap occupancy probability under dc bias condition (p(dc)), which is traditionally used for RTN characterization, ac trap occupancy probability (p(ac)), i.e., the effective percentage of time trap being occupied under ac bias condition, is proposed and evaluated analytically to investigate the dynamic trapping/detrapping behavior of RTN. A simulation approach that fully integrates the dynamic properties of ac trap effects is presented for accurate simulation of RTN in digital circuits. The impacts of RTN on digital circuit performances, e.g., failure probabilities of SRAM cells and jitters of ring oscillators, are then evaluated by the simulations and verified against predictions based on p(ac). The results show that degradations are highly workload dependent and that p(ac) is critical in accurately evaluating the RTN-induced performance degradation and variability. The results are helpful for robust and resilient circuit design.; 973 Project [2011CBA00601]; National Natural Science Foundation of China [61421005, 61106085]; National Science and Technology Major Project [2009ZX02035-001]; SCI(E); EI; ARTICLE; r.wang@pku.edu.cn; ruhuang@pku.edu.cn; 6; 1725-1732; 62
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/419712]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Luo, Mulong,Wang, Runsheng,Guo, Shaofeng,et al. Impacts of Random Telegraph Noise (RTN) on Digital Circuits[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2015.
APA	Luo, Mulong,Wang, Runsheng,Guo, Shaofeng,Wang, Jing,Zou, Jibin,&Huang, Ru.(2015).Impacts of Random Telegraph Noise (RTN) on Digital Circuits.IEEE TRANSACTIONS ON ELECTRON DEVICES.
MLA	Luo, Mulong,et al."Impacts of Random Telegraph Noise (RTN) on Digital Circuits".IEEE TRANSACTIONS ON ELECTRON DEVICES (2015).