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科研机构
半导体研究所 [21]
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会议论文 [21]
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2009 [2]
2008 [2]
2006 [2]
2004 [4]
2003 [1]
2002 [1]
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半导体材料 [21]
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Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers
会议论文
5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008
作者:
Ma WQ
;
Cao YL
;
Yang T
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
DENSITY-OF-STATES
Morphology and wetting layer properties of InAs/GaAs nanostructures
会议论文
5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008
作者:
Xu B
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/03/09
MOLECULAR-BEAM EPITAXY
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:
Xu B
;
Jin P
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/03/09
INAS
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/03/09
INDUCED REFRACTIVE-INDEX
GROWTH
LASERS
GAAS
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots
会议论文
15th international conferene on dynamical processes in excited states of solids, shanghai, peoples r china, aug 01-05, 2005
作者:
Jin P
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  |  
浏览/下载:159/26
  |  
提交时间:2010/03/29
quantum dots
Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
作者:
Ye XL
;
Jin P
;
Xu B
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  |  
浏览/下载:119/42
  |  
提交时间:2010/03/29
lateral intersubband photocurrent
Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者:
Jin P
;
Xu B
收藏
  |  
浏览/下载:127/16
  |  
提交时间:2010/03/29
QUANTUM DOTS
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003
作者:
Ye XL
;
Xu B
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
SHORT-PERIOD SUPERLATTICES
RAMAN-SCATTERING
QUANTUM-WELLS
GROWTH
ROUGHNESS
SEGREGATION
ALAS/GAAS
ALAS
GAAS
Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001)
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Wang YL
;
Wu J
;
Chen YH
;
Wang ZG
;
Zeng YP
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  |  
浏览/下载:124/17
  |  
提交时间:2010/03/29
LAYER-ORDERING ORIENTATION
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者:
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:82/12
  |  
提交时间:2010/03/29
1.3 MU-M
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