Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy

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	Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
	Liang, LY ; Ye, XL ; Jin, P ; Chen, YH ; Wang, ZG
	2008
会议名称	2nd ieee international nanoelectronics conference
会议日期	mar 24-27, 2008
会议地点	shanghai, peoples r china
关键词	INDUCED REFRACTIVE-INDEX GROWTH LASERS GAAS
页码	vols 1-3: 48-52
通讯作者	liang, ly, chinese acad sci, key lab semicond mat sci, inst semicond, pob 912, beijing 100083, peoples r china.
中文摘要	atomic force microscopy and photoluminescence spectroscopy (pl) has been used to study asymmetric bilayer inas quantum dot (qd) structures grow by molecular-beam epitaxy on gaas (001) substrates. the two inas layers were separated by a 7-nm-thick gaas spacer layer and were grown at different substrate temperature. we took advantage of the intrinsic nonuniformity of the molecular beams to grow the seed layer with an average inas coverage of 2.0 ml. then the seed layer thickness could be divided into three areas: below, around and above the critical thickness of the 2d-3d transition along the 11101 direction of the substrate. correspondingly, the nucleation mechanisms of the upper inas layer (uil) could be also divided into three areas: temperature-controlled, competition between temperature-controlled and strain-induced, and strain-induced (template-controlled) nucleation. small quantum dots (qds) with a large density around 5 x 10(10) cm(-2) are found in the temperature-controlled nucleation area. the qd size distributions undergo a bimodal to a unimodal transition with decreasing qd densities in the strain-induced nucleation area, where the qd densities vary following that of the seed layer (templating effect). the optimum qd density with the uil thickness fixed at 2.4 ml is shown to be around 1.5 x 10(10) cm(-2), for which the qd size distribution is unimodal and pl emission peaks at the longest wavelength. the qds in the in-between area exhibit a broad size distribution with small qds and strain-induced large qds coexisting.
英文摘要	atomic force microscopy and photoluminescence spectroscopy (pl) has been used to study asymmetric bilayer inas quantum dot (qd) structures grow by molecular-beam epitaxy on gaas (001) substrates. the two inas layers were separated by a 7-nm-thick gaas spacer layer and were grown at different substrate temperature. we took advantage of the intrinsic nonuniformity of the molecular beams to grow the seed layer with an average inas coverage of 2.0 ml. then the seed layer thickness could be divided into three areas: below, around and above the critical thickness of the 2d-3d transition along the 11101 direction of the substrate. correspondingly, the nucleation mechanisms of the upper inas layer (uil) could be also divided into three areas: temperature-controlled, competition between temperature-controlled and strain-induced, and strain-induced (template-controlled) nucleation. small quantum dots (qds) with a large density around 5 x 10(10) cm(-2) are found in the temperature-controlled nucleation area. the qd size distributions undergo a bimodal to a unimodal transition with decreasing qd densities in the strain-induced nucleation area, where the qd densities vary following that of the seed layer (templating effect). the optimum qd density with the uil thickness fixed at 2.4 ml is shown to be around 1.5 x 10(10) cm(-2), for which the qd size distribution is unimodal and pl emission peaks at the longest wavelength. the qds in the in-between area exhibit a broad size distribution with small qds and strain-induced large qds coexisting.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:51z (gmt). no. of bitstreams: 1 646.pdf: 818749 bytes, checksum: 0c256d21f69f2554b60763c794687628 (md5) previous issue date: 2008; ieee.; [liang, l. y.; ye, x. l.; jin, p.; chen, y. h.; wang, z. g.] chinese acad sci, key lab semicond mat sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	ieee.
会议录	2008 2nd ieee international nanoelectronics conference
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	978-1-4244-1572-4
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/7748]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liang, LY,Ye, XL,Jin, P,et al. Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy[C]. 见:2nd ieee international nanoelectronics conference. shanghai, peoples r china. mar 24-27, 2008.