Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy

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	Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
	Xu B; Jin P
	2008
会议名称	9th international conference on solid-state and integrated-circuit technology
会议日期	oct 20-23, 2008
会议地点	beijing, peoples r china
关键词	INAS
页码	vols 1-4: 673-676
通讯作者	chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china.
中文摘要	the wetting layers (wl) in inas/gaas quantum-dot system have been studied by reflectance difference spectroscopy (rds), in which two structures related to the heavy-hole (hh) and light-hole (lh) transitions in the wl have been observed. the evolution and segregation behaviors of wl during stranski-krastanow (sk) growth mode have been studied from the analysis of the wl-related optical transition energies. it has been found that the segregation coefficient of indium atoms varies linearly with the inas amount in wl. in addition, the effect of the growth temperature on the critical thickness for inas island formation has also been studied. the critical thickness defined by the appearance of inas dots, which is determined by afm, shows a complex variation with the growth temperature. however, the critical thickness determined by rds is almost constant in the range of 510-540 degrees c.
英文摘要	the wetting layers (wl) in inas/gaas quantum-dot system have been studied by reflectance difference spectroscopy (rds), in which two structures related to the heavy-hole (hh) and light-hole (lh) transitions in the wl have been observed. the evolution and segregation behaviors of wl during stranski-krastanow (sk) growth mode have been studied from the analysis of the wl-related optical transition energies. it has been found that the segregation coefficient of indium atoms varies linearly with the inas amount in wl. in addition, the effect of the growth temperature on the critical thickness for inas island formation has also been studied. the critical thickness defined by the appearance of inas dots, which is determined by afm, shows a complex variation with the growth temperature. however, the critical thickness determined by rds is almost constant in the range of 510-540 degrees c.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.; [chen, yonghai; tang, chenguang; xu, bo; jin, peng; wang, zhanguo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
收录类别	其他
会议主办者	ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.
会议录	2008 9th international conference on solid-state and integrated-circuit technology
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	978-1-4244-2185-5
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/8274]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B,Jin P. Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy[C]. 见:9th international conference on solid-state and integrated-circuit technology. beijing, peoples r china. oct 20-23, 2008.