Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers

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	Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers
	Ma WQ; Cao YL; Yang T
	2009
会议名称	5th international conference on semiconductor quantum dots
会议日期	may 11-16, 2008
会议地点	gyeongju, south korea
关键词	DENSITY-OF-STATES
页码	vol 6,no 4,6 (4): 948-951
通讯作者	yang, t, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china.
中文摘要	a theoretical study of modal gain in p-doped 1.3 mu m inas/gaas quantum dot (qd) lasers is presented. the expression of modal gain is derived, which includes an effective ratio that describes how many qds contribute to the modal gain. the calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. the calculated maximum modal gain is is a good agreement with the experimental data. furthermore, qds with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (c) 2009 wiley-vch verlag gmbh & co. kgaa, weinheim
英文摘要	a theoretical study of modal gain in p-doped 1.3 mu m inas/gaas quantum dot (qd) lasers is presented. the expression of modal gain is derived, which includes an effective ratio that describes how many qds contribute to the modal gain. the calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. the calculated maximum modal gain is is a good agreement with the experimental data. furthermore, qds with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (c) 2009 wiley-vch verlag gmbh & co. kgaa, weinheim; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; [ji, hai-ming; yang, tao; cao, yu-lian; ma, wen-quan; cao, qing; chen, liang-hui] chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	其他
会议录	physica status solidi c - current topics in solid state physics
会议录出版者	wiley-v c h verlag gmbh ; pappelallee 3, w-69469 weinheim, germany
会议录出版地	pappelallee 3, w-69469 weinheim, germany
学科主题	半导体材料
语种	英语
ISSN号	1610-1634
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/8268]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ma WQ,Cao YL,Yang T. Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers[C]. 见:5th international conference on semiconductor quantum dots. gyeongju, south korea. may 11-16, 2008.