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CORC

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Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity 期刊论文
IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 卷号: 6, 期号: 2
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载：16/0  |  提交时间：2017/03/11
Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity 期刊论文
ieee journal of photovoltaics, 2016, 卷号: 6, 期号: 2, 页码: 454-459
Jing Yang; De-Gang Zhao; De-Sheng Jiang; Ping Chen; Jian-Jun Zhu; Zong-Shun Liu; Ling-Cong Le; Xiao-Guang He; Xiao-Jing Li; Li-Qun Zhang; Jian-Ping Liu; Hui Yang
收藏  |  浏览/下载：21/0  |  提交时间：2017/03/10
Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 9, 页码: 5
作者:  Li,XJ;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载：45/0  |  提交时间：2015/12/31
Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films 期刊论文
journal of vacuum science & technology a, 2015, 卷号: 33, 期号: 2, 页码: 021505
Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Zongshun Liu; Lingcong Le; Xiaoguang He; Xiaojing Li
收藏  |  浏览/下载：22/0  |  提交时间：2016/03/23
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 6
作者:  Yang, J;  Yang H(杨辉)
收藏  |  浏览/下载：10/0  |  提交时间：2014/12/08
Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 16
作者:  Zhang SM(张书明);  Yang H(杨辉);  Liu JP(刘建平);  Yang, J
收藏  |  浏览/下载：13/0  |  提交时间：2014/12/19
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 6, 页码: 068801
Yang, J; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Li, L; Wu, LL; Le, LC; Li, XJ; He, XG; Wang, H; Zhu, JJ; Zhang, SM; Zhang, BS; Yang, H
收藏  |  浏览/下载：15/0  |  提交时间：2015/04/02
Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 卷号: 28, 期号: 10
作者:  Zhang, BS(张宝顺);  Yang, H(杨辉);  Zhang, SM(张书明)
收藏  |  浏览/下载：6/0  |  提交时间：2014/01/13
Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 8
作者:  H Yang（杨辉）;  S M Zhang（张书明）;  B S Zhang（张宝顺）
收藏  |  浏览/下载：12/0  |  提交时间：2013/01/22
基于Ni/Ag/Pt的P型GaN欧姆接触 期刊论文
2010, 2010
马洪霞; 韩彦军; 申屠伟进; 张贤鹏; 罗毅; 钱可元; MA Hong-xia; HAN Yan-jun; SHENTU Wei-jin; ZHANG Xian-peng; LUO Yi; QIAN Ke-yuan
收藏  |  浏览/下载：1/0

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