Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN
	Li,XJ; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ; Liu, ZS; Le, LC; Yang, J; He, XG; Zhang, LQ(张立群)
刊名	CHINESE PHYSICS B
	2015
卷号	24 期号:9 页码:5
关键词	ohmic contact p-type GaN transportation mechanism deep-level-defect band
通讯作者	Zhao, DG
英文摘要	The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p(++)-GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I-V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p(++)-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p(++)-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97 x 10(-4) Omega.cm(2) is achieved.
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3317]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Li,XJ,Zhao, DG,Jiang, DS,et al. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN[J]. CHINESE PHYSICS B,2015,24(9):5.
APA	Li,XJ.,Zhao, DG.,Jiang, DS.,Chen, P.,Zhu, JJ.,...&Yang, H.(2015).Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN.CHINESE PHYSICS B,24(9),5.
MLA	Li,XJ,et al."Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN".CHINESE PHYSICS B 24.9(2015):5.