Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN
	Zhang, BS(张宝顺); Yang, H(杨辉); Zhang, SM(张书明)
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2013-10
卷号	28 期号:10
通讯作者	Wu, LL
英文摘要	The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 degrees C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 degrees C exhibits the best ohmic contact properties with respect to the specific contact resistivity (rho(c)). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer.
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000324646800020
公开日期	2014-01-13
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1314]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Zhang, BS,Yang, H,Zhang, SM. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2013,28(10).
APA	Zhang, BS,Yang, H,&Zhang, SM.(2013).Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,28(10).
MLA	Zhang, BS,et al."Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28.10(2013).