Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

	Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells
	Yang, J ; Zhao, DG ; Jiang, DS ; Liu, ZS ; Chen, P ; Li, L ; Wu, LL ; Le, LC ; Li, XJ ; He, XG ; Wang, H ; Zhu, JJ ; Zhang, SM ; Zhang, BS ; Yang, H
刊名	chinese physics b
	2014
卷号	23 期号:6 页码:068801
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2015-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26415]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Yang, J,Zhao, DG,Jiang, DS,et al. Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells[J]. chinese physics b,2014,23(6):068801.
APA	Yang, J.,Zhao, DG.,Jiang, DS.,Liu, ZS.,Chen, P.,...&Yang, H.(2014).Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells.chinese physics b,23(6),068801.
MLA	Yang, J,et al."Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells".chinese physics b 23.6(2014):068801.