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CORC

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Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β-Ga2O3 power diodes 期刊论文
APPLIED PHYSICS LETTERS, 2023, 卷号: 123
作者:  Liu, Jinyang;  Han, Zhao;  Ren, Lei;  Yang, Xiao;  Xu, Guangwei
收藏  |  浏览/下载：6/0  |  提交时间：2023/11/10
Heteroepitaxial and homoepitaxial nucleation strategies to grow Sb-2 S-3 nanorod arrays and therefrom a derived gain of 7.18%-efficient Sb-2( ) (S,Se)(3 )quasi-nanoarray heterojunction solar cells 期刊论文
APPLIED MATERIALS TODAY, 2022, 卷号: 27
作者:  Liu, Rong;  Dong, Chao;  Zhu, Liangxin;  Chen, Junwei;  Huang, Jia
收藏  |  浏览/下载：14/0  |  提交时间：2022/12/23
Toward Phi 56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method 期刊论文
Crystal Growth & Design, 2022, 卷号: 22, 期号: 5, 页码: 3462-3470
作者:  D. Y. Fu;  D. Lei;  Z. Li;  G. Zhang;  J. L. Huang
收藏  |  浏览/下载：2/0  |  提交时间：2023/06/14
Simultaneous detection of trace Ag(I) and Cu(II) ions using homoepitaxially grown GaN micropillar electrode 期刊论文
ANALYTICA CHIMICA ACTA, 2020, 卷号: 1100, 页码: 22-30
作者:  Liu, Qingyun;  Li, Jing;  Yang, Wenjin;  Zhang, Xinglai;  Zhang, Cai
收藏  |  浏览/下载：29/0  |  提交时间：2021/02/02
Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125359
作者:  X.F. Liu;   G.G. Yan;   L. Sang;   Y.X. Niu;   Y.W. He;   Z.W. Shen;   Z.X. Wen;   J. Chen;   W.S. Zhao;   L. Wang;   M. Guan;   F. Zhang;   G.S. Sun;   Y.P. Zeng
收藏  |  浏览/下载：10/0  |  提交时间：2021/11/26
Enhanced ultraviolet absorption in diamond surface via localized surface plasmon resonance in palladium nanoparticles 期刊论文
Applied Surface Science, 2019, 卷号: 464, 页码: 455-457
作者:  Chang, Xiaohui;  Wang, Yan-Feng;  Zhang, Xiaofan;  Liu, Zhangcheng;  Fu, Jiao
收藏  |  浏览/下载：37/0  |  提交时间：2019/11/19
Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers 期刊论文
Journal of Crystal Growth, 2019, 卷号: Vol.507, 页码: 143-145
作者:  Yingxi Niu;  Xiaoyan Tang;  Pengfei Wu;  Lingyi Kong;  Yun Li
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/13
Study of a new type nominal "washboard-like" triangular defects in 4H-SiC 4 degrees off-axis (0001) Si-face homoepitaxial layers 期刊论文
2019, 卷号: 506, 页码: 14-18
作者:  Hu, Jichao;  Jia, Renxu;  Niu, Yingxi;  Zang, Yuan;  Pu, Hongbin
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/20
Low defect thick homoepitaxial layers grown on 4H-SiC wafers for 6500 V JBS devices 会议论文
Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018, Beijing, China, 2018-07-09
作者:  Niu, Yingxi;  Tang, Xiaoyan;  Tian, Lixin;  Zheng, Liu;  Zhang, Wenting
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/20
Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 283-287
作者:  X.F. Liu ;   G.G. Yan ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   Y.W. He ;   W.S. Zhao ;   L. Wang ;   M. Guan ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
收藏  |  浏览/下载：7/0  |  提交时间：2020/07/31

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