CORC

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Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modes 期刊论文
OPTICAL MATERIALS EXPRESS, 2018, 卷号: 8, 期号: 1, 页码: 119-127
作者:  Feng, Zhaochi;  Feng, Zhe Chuan;  Wan, Lingyu;  Zhao, Dishu;  Wang, Fangze
收藏  |  浏览/下载:15/0  |  提交时间:2019/06/20
Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 504, 页码: 7-12
作者:  X.F. Liu ;   G.G. Yan ;   B. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
收藏  |  浏览/下载:29/0  |  提交时间:2019/11/15
Anisotropic Three-Dimensional Thermal Stress Modeling and Simulation of Homoepitaxial AlN Single Crystal Growth by the Physical Vapor Transport Method 期刊论文
CRYSTAL GROWTH & DESIGN, 2018, 卷号: 18, 页码: 2998-3007
作者:  Wang, Qikun[1];  Huang, Jiali[2];  Wang, Zhihao[3];  He, Guangdong[4];  Lei, Dan[5]
收藏  |  浏览/下载:5/0  |  提交时间:2019/04/22
Effect of Nb doping on structural and electrical properties of homoepitaxial rutile TiO2:Nb films 期刊论文
CERAMICS INTERNATIONAL, 2018, 卷号: 44, 期号: 2, 页码: 2432-2435
作者:  Wang, Weiguang;  Feng, Xianjin;  Luan, Caina;  Ma, Jin
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/11
The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: Vol.504, 页码: 37-40
作者:  Niu Yingxi;  Tang Xiaoyan;  Sang Ling;  Li Yun;  Kong Lingyi
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/26
The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition 期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728
作者:  Jiang, K.;  Sun, X. J.;  Ben, J. W.;  Jia, Y. P.;  Liu, H. N.
收藏  |  浏览/下载:3/0  |  提交时间:2019/09/17


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