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安徽大学 [5]
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期刊论文 [21]
会议论文 [1]
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Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device
期刊论文
Journal of Alloys and Compounds, 2019, 页码: 543-549
作者:
Ma, Pengfei
;
Sun, Jiamin
;
Zhang, Guanqun
;
Liang, Guangda
;
Xin, Qian
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/11
Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 792, 页码: 543-549
作者:
Ma, Pengfei
;
Sun, Jiamin
;
Zhang, Guanqun
;
Liang, Guangda
;
Xin, Qian
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/12/11
HfAlO
High-k
Gate insulator
A-InGaZnO
Thin-film transistor
Atomic
layer deposition
Low-power device
Stress-induced charge trapping and electrical properties of atomic-layer-deposited HfAlO/Ga2O3 metal-oxide-semiconductor capacitors
期刊论文
2019, 卷号: 52
作者:
Zhang, Hongpeng
;
Yuan, Lei
;
Jia, Renxu
;
Tang, Xiaoyan
;
Hu, Jichao
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/20
gallium oxide
HfAlO/Ga2O3 MOSCAP
constant-voltage stress
oxide traps
Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters
期刊论文
RSC ADVANCES, 2018, 卷号: Vol.8 No.64, 页码: 36584-36595
作者:
Chen, Xiaoshuang
;
Li, Wendong
;
He, Gang
;
Zhang, Miao
;
Sun, Zhaoqi
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters
期刊论文
RSC Advances, 2018, 卷号: Vol.8 No.64, 页码: 36584-36595
作者:
Chen, Xiaoshuang
;
Li, Wendong
;
He, Gang
;
Zhang, Miao
;
Sun, Zhaoqi
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/24
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
作者:
He, Gang
;
Jiang, Shanshan
;
Li, Wendong
;
Zheng, Changyong
;
He, Huaxin
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2018/05/25
High-k Gate Dielectric
Atomic-layer-deposition
Interface Stability
Phase Separation
Annealing Temperature
Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513
作者:
Gao, J.
;
He, G.
;
Liu, M.
;
Lv, J. G.
;
Sun, Z. Q.
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2017/11/21
High-k Dielectric
Interface Thermal Stability
Atomic-layer-deposition
Band Alignment
Electrical Properties
Leakage Current Mechanism
Influence of HfAlO Composition on Resistance Ratio of RRAM with Ti electrode
会议论文
作者:
Qi, Yanfei
;
Fang, Yuxiao
;
Zhao, Chun
;
Lu, Qifeng
;
Liu, Chenguang
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  |  
浏览/下载:3/0
  |  
提交时间:2019/11/26
Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition
期刊论文
NANOSCALE RESEARCH LETTERS, 2017, 卷号: 12, 页码: -
作者:
Yang, LF
;
Wang, T
;
Zou, Y
;
Lu, HL
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2017/12/08
Band Alignments
Hfalo Dielectric
Inp
Atomic Layer Deposition
Modulation of electrical properties and current conduction mechanism of HfAlO/Ge gate stack by ALD-derived Al2O3 passivation layer
期刊论文
Journal of Alloys and Compounds, 2017, 卷号: Vol.695, 页码: 1591-1599
作者:
Li,W. D.
;
Jin,P.
;
Wei,H. H.
;
Xiao,X. D.
;
Gao,J.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
SURFACE PASSIVATION
INTERFACE PROPERTIES
HIGH-PERFORMANCE
DEPOSITED AL2O3
HYBRID FILMS
GE
DIELECTRICS
HFO2
CAPACITORS
GAAS
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