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	Modulation of electrical properties and current conduction mechanism of HfAlO/Ge gate stack by ALD-derived Al2O3 passivation layer
	Li,W. D.; Jin,P.; Wei,H. H.; Xiao,X. D.; Gao,J.; He,G.; Jiang,S. S.
刊名	Journal of Alloys and Compounds
	2017
卷号	Vol.695页码:1591-1599
关键词	SURFACE PASSIVATION INTERFACE PROPERTIES HIGH-PERFORMANCE DEPOSITED AL2O3 HYBRID FILMS GE DIELECTRICS HFO2 CAPACITORS GAAS
ISSN号	0925-8388
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2156890
专题	安徽大学
作者单位	1.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230039, Peoples R China 2.Anhui Univ Sci & Technol, Sch Sci, Huainan 232001, Peoples R China
推荐引用方式 GB/T 7714	Li,W. D.,Jin,P.,Wei,H. H.,et al. Modulation of electrical properties and current conduction mechanism of HfAlO/Ge gate stack by ALD-derived Al2O3 passivation layer[J]. Journal of Alloys and Compounds,2017,Vol.695:1591-1599.
APA	Li,W. D..,Jin,P..,Wei,H. H..,Xiao,X. D..,Gao,J..,...&Jiang,S. S..(2017).Modulation of electrical properties and current conduction mechanism of HfAlO/Ge gate stack by ALD-derived Al2O3 passivation layer.Journal of Alloys and Compounds,Vol.695,1591-1599.
MLA	Li,W. D.,et al."Modulation of electrical properties and current conduction mechanism of HfAlO/Ge gate stack by ALD-derived Al2O3 passivation layer".Journal of Alloys and Compounds Vol.695(2017):1591-1599.

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