QQ客服 官方微博 反馈留言

	Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters
	Chen, Xiaoshuang; Li, Wendong; He, Gang; Zhang, Miao; Sun, Zhaoqi
刊名	RSC ADVANCES
	2018
卷号	Vol.8 No.64页码:36584-36595
ISSN号	2046-2069
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2201372
专题	安徽大学
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China 2.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Anhui, Peoples R China 3.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Chen, Xiaoshuang,Li, Wendong,He, Gang,et al. Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters[J]. RSC ADVANCES,2018,Vol.8 No.64:36584-36595.
APA	Chen, Xiaoshuang,Li, Wendong,He, Gang,Zhang, Miao,&Sun, Zhaoqi.(2018).Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters.RSC ADVANCES,Vol.8 No.64,36584-36595.
MLA	Chen, Xiaoshuang,et al."Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters".RSC ADVANCES Vol.8 No.64(2018):36584-36595.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。