Influence of HfAlO Composition on Resistance Ratio of RRAM with Ti electrode | |
Qi, Yanfei; Fang, Yuxiao; Zhao, Chun; Lu, Qifeng; Liu, Chenguang; Yang, Li; Zhao, Ce Zhou | |
2017 | |
页码 | 1-3 |
会议录 | 2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) |
URL标识 | 查看原文 |
ISSN号 | 1946-1550 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2941314 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Qi, Yanfei,Fang, Yuxiao,Zhao, Chun,et al. Influence of HfAlO Composition on Resistance Ratio of RRAM with Ti electrode[C]. 见:. |
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