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CORC

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The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ
收藏  |  浏览/下载：36/0  |  提交时间：2012/01/06
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi Y;  Lin DF;  Peng EC
收藏  |  浏览/下载：19/0  |  提交时间：2011/09/14
Structural and optical properties of ZnO films on SrTiO3 substrates by MOCVD 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015415
作者:  Jia CH
收藏  |  浏览/下载：173/14  |  提交时间：2010/03/08
Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5469-5472
作者:  Yang T
收藏  |  浏览/下载：252/54  |  提交时间：2010/03/08
Study of GaN growth on ultra-thin Si membranes 期刊论文
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 986-989
Wang X; Wu AM; Chen J; Wang X; Wu YX; Zhu JJ; Yang H
收藏  |  浏览/下载：58/2  |  提交时间：2010/03/08
GaN  
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin)
收藏  |  浏览/下载：125/38  |  提交时间：2010/03/29
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11
Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423
Hu GQ; Kong X; Wan L; Wang YQ; Duan XF; Lu Y; Liu XL
收藏  |  浏览/下载：23/0  |  提交时间：2010/08/12
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
作者:  Zhang SM
收藏  |  浏览/下载：292/3  |  提交时间：2010/08/12
Strain relaxation of InP film directly grown on GaAs patterned compliant substrate 期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 71-76
作者:  Li DB
收藏  |  浏览/下载：40/0  |  提交时间：2010/08/12

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