Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition

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	Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
	Hu GQ ; Kong X ; Wan L ; Wang YQ ; Duan XF ; Lu Y ; Liu XL
刊名	journal of crystal growth
	2003
卷号	256 期号:3-4 页码:416-423
关键词	amorphous layer dislocation transmission electron microscopy metalorganic chemical vapor deposition GaN MOLECULAR-BEAM EPITAXY HIGH-QUALITY GAN HETEROEPITAXIAL GROWTH ELECTRON-DIFFRACTION DEFECT STRUCTURE HETEROSTRUCTURE DISLOCATIONS MICROSCOPY (111)SI LAYER
ISSN号	0022-0248
通讯作者	hu gq,chinese acad sci,inst phys,beijing lab electron microscopy,pob 2724,beijing 100080,peoples r china.
中文摘要	we report the transmission electron microscopy (tem) study of the microstructure of wurtzitic gan films grown on si(i i i) substrates with aln buffer layers by metalorganic chemical vapor deposition (mocvd) method. an amorphous layer was formed at the interface between si and aln when thick gan film was grown. we propose the amorphous layer was induced by the large stress at the interface when thick gan was grown. the in0.1ga0.9n/gan multiple quantum well (mqw) reduced the dislocation density by obstructing the mixed and screw dislocations from passing through the mqw. but no evident reduction of the edge dislocations by the mqw was observed. it was found that dislocations located at the boundaries of grains slightly in-plane misoriented have screw component. inversion domain is also observed. (c) 2003 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11484]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Hu GQ,Kong X,Wan L,et al. Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition[J]. journal of crystal growth,2003,256(3-4):416-423.
APA	Hu GQ.,Kong X.,Wan L.,Wang YQ.,Duan XF.,...&Liu XL.(2003).Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition.journal of crystal growth,256(3-4),416-423.
MLA	Hu GQ,et al."Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition".journal of crystal growth 256.3-4(2003):416-423.