Study of GaN growth on ultra-thin Si membranes

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	Study of GaN growth on ultra-thin Si membranes
	Wang X ; Wu AM ; Chen J ; Wang X ; Wu YX ; Zhu JJ ; Yang H
刊名	solid-state electronics
	2008
卷号	52 期号:6 页码:986-989
关键词	GaN
ISSN号	0038-1101
通讯作者	wang, x, chinese acad sci, state key lab funct mat informat, shanghai inst microsyst & informat technol, 865 changning rd, shanghai 200050, peoples r china. 电子邮箱地址: xxwang@mail.sim.ac.cn
中文摘要	10 mu m-thick ultra-thin si (111) membranes for gan epi-layers growth were successfully fabricated on silicon-on-insulator (soi) substrate by backside etching the handle si and buried oxide (box) layer. then 1 mu m-thick gan layers were deposited on these si membranes by metal-organic chemical vapor deposition (mocvd). the crack-free areas of 250 mu m, x 250 mu m were obtained on the gan layers due to the reduction of thermal stress by using these ultra-thin si membranes, which was further confirmed by the photoluminescence (pl) spectra and the simulation results from the finite element method calculation by using the software of ansys. in this paper, a newly developed approach was demonstrated to utilize micromechanical structures for gan growth, which would improve the material quality of the epi-layers and facilitate gan-based micro electro-mechanical system (mems) fabrication, especially the pressure sensor, in the future applications. (c) 2008 elsevier ltd. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6612]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang X,Wu AM,Chen J,et al. Study of GaN growth on ultra-thin Si membranes[J]. solid-state electronics,2008,52(6):986-989.
APA	Wang X.,Wu AM.,Chen J.,Wang X.,Wu YX.,...&Yang H.(2008).Study of GaN growth on ultra-thin Si membranes.solid-state electronics,52(6),986-989.
MLA	Wang X,et al."Study of GaN growth on ultra-thin Si membranes".solid-state electronics 52.6(2008):986-989.