Strain relaxation of InP film directly grown on GaAs patterned compliant substrate

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	Strain relaxation of InP film directly grown on GaAs patterned compliant substrate
	Li DB
刊名	journal of crystal growth
	2002
卷号	243 期号:1 页码:71-76
关键词	dislocation strain molecular beam epitaxy organometallic vapor phase epitaxy semiconductor III-V materials CRITICAL THICKNESS HETEROEPITAXIAL GROWTH LAYERS OXIDATION EPITAXY
ISSN号	0022-0248
通讯作者	zhang zc,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	in order to overcome the large lattice mismatch in the heteroepitaxy, a new patterned compliant substrate method has been introduced, which has overcome the disadvantages of previously published methods. inp film of thickness 800 nm was directly grown on this substrate. scanning electron microscopy (sem) has shown that good surface morphology has been obtained. in addition, photoluminescence (pl) and double crystal x-ray diffraction (dcxrd) study have shown that the residual strain has been reduced, and that the structure quality has been improved. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11780]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li DB. Strain relaxation of InP film directly grown on GaAs patterned compliant substrate[J]. journal of crystal growth,2002,243(1):71-76.
APA	Li DB.(2002).Strain relaxation of InP film directly grown on GaAs patterned compliant substrate.journal of crystal growth,243(1),71-76.
MLA	Li DB."Strain relaxation of InP film directly grown on GaAs patterned compliant substrate".journal of crystal growth 243.1(2002):71-76.