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西安交通大学 [5]

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	Thermionic electron emission from single carbon nanostructures and its applications in vacuum nanoelectronics 期刊论文 MRS BULLETIN, 2017 Wei, Xianlong; Chen, Qing; Peng, Lian-Mao 收藏 \| 浏览/下载：4/0 \| 提交时间：2017/12/03 ON/OFF CURRENT RATIO WORK FUNCTION FIELD GRAPHENE NANOTUBES TEMPERATURE TRANSISTOR EMITTERS DISPLAY ARRAYS
	The immunity of doping-less junctionless transistor variations including the line edge roughness 会议论文 Hong Kong, Hong kong, August 3, 2016 - August 5, 2016 作者: Wan, Wenbo; Lou, Haijun; Xiao, Ying; Lin, Xinnan 收藏 \| 浏览/下载：23/0 \| 提交时间：2020/11/15 Etching Semiconductor doping Transistors Charge plasmas Electrical characteristic Etching process Junctionless Junctionless transistors Line Edge Roughness ON/OFF current ratio variation
	Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contacts 期刊论文 ELECTRONICS LETTERS, 2016 Zhang, Yi; Han, Dedong; Huang, Lingling; Dong, Junchen; Cong, Yingying; Cui, Guodong; Zhang, Xiaomi; Zhang, Xing; Zhang, Shengdong; Wang, Yi 收藏 \| 浏览/下载：5/0 \| 提交时间：2017/12/03 thin film transistors electrical contacts tin zinc compounds indium compounds tin compounds tin-doped zinc oxide thin-film transistors heterojunction source-drain contacts bottom gate top contact thin-film transistors glass substrate indium tin oxide thin films alumni zinc oxide thin films AZO thin films aluminium thin films AZO S-D electrode saturation mobility subthreshold slope on-off current ratio output characteristic parasitic resistance contact performance t
	Graphene-Based Micro-Emitters and Vacuum Transistors 其他 2016-01-01 Wu, Gongtao; Wei, Xianlong 收藏 \| 浏览/下载：5/0 \| 提交时间：2017/12/03 graphene emitter vacuum transistor ambipolar device ON/OFF CURRENT RATIO EMISSION CATHODE
	Suppression of current collapse in AlGaN/GaN MISHEMTs using in-situ SiN gate dielectric and PECVD SiN passivation 会议论文作者: Jiang, Huaxing; Liu, Chao; Lu, Xing; Lau, Kei May 收藏 \| 浏览/下载：6/0 \| 提交时间：2019/11/26 AlGaN/GaN MIS-HEMTs Current collapse GaN based ON/OFF current ratio Power switching applications SiN gate dielectrics Subthreshold slope Surface passivation
	Characteristics study of low temperature enhanced amorphous InGaZnO thin film transistors 期刊论文 Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University, 2015, 卷号: 49, 期号: [db:dc_citation_issue], 页码: 1-5 and 18 作者: Li, Yuanjie; Jiang, Kai; Liu, Zilong 收藏 \| 浏览/下载：17/0 \| 提交时间：2019/12/02 Active channel layers Amorphous-indium gallium zinc oxides Characteristics studies Magnetron-sputtering deposition ON/OFF current ratio Output characteristics Saturation mobility Subthreshold swing
	结构转变方式对光致变色分子开关输运性能影响的从头计算研究（英文）期刊论文 http://electrochem.xmu.edu.cn/CN/abstract/abstract10072.shtml, 2014 贺园园; 赵健伟; HE Yuan-yuan; ZHAO Jian-wei 收藏 \| 浏览/下载：7/0 \| 提交时间：2014/07/07 结构转变方式光致变色电子传递电流开关比分子轨道 conformational transformation photochrome electronic transport current on-off ratio molecular orbitals
	Latest advance of researches on graphene transistors 期刊论文 Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University, 2014, 卷号: 48, 期号: [db:dc_citation_issue], 页码: 1-8 and 48 作者: Li, Xin; Guo, Shixi; Song, Hui; Li, Quanfu; Shi, Junjie 收藏 \| 浏览/下载：2/0 \| 提交时间：2019/12/03 Flexible manufacturing Heterogeneous structures Integrated Circuit industries Manufacturing process Maximum oscillation frequency ON/OFF current ratio Oscillating frequencies Radio frequency transistors
	Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文 ieee electron device letters, 2014 Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Jin, Chunyan; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/10 Post-gate annealing (PGA) GaN enhancement mode MOSFET ON/OFF current ratio mesa isolation current GAN MIS-HEMTS AL2O3/GAN MOSFET INTERFACE
	Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 12, 页码: 1200-1202 作者: Cai, Y (蔡勇) 收藏 \| 浏览/下载：33/0 \| 提交时间：2015/02/03 Post-gate annealing (PGA) GaN enhancement mode MOSFET ON/OFF current ratio mesa isolation current

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