Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction   source/drain contacts

doi:10.1049/el.2015.3277

CORC > 北京大学 > 信息科学技术学院

	Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contacts
	Zhang, Yi ; Han, Dedong ; Huang, Lingling ; Dong, Junchen ; Cong, Yingying ; Cui, Guodong ; Zhang, Xiaomi ; Zhang, Xing ; Zhang, Shengdong ; Wang, Yi
刊名	ELECTRONICS LETTERS
	2016
关键词	thin film transistors electrical contacts tin zinc compounds indium compounds tin compounds tin-doped zinc oxide thin-film transistors heterojunction source-drain contacts bottom gate top contact thin-film transistors glass substrate indium tin oxide thin films alumni zinc oxide thin films AZO thin films aluminium thin films AZO S-D electrode saturation mobility subthreshold slope on-off current ratio output characteristic parasitic resistance contact performance t
DOI	10.1049/el.2015.3277
英文摘要	Bottom gate, top contact thin-film transistors (TFTs) with transparent Sn-doped zinc oxide as the active layer have been fabricated on glass substrate at room temperature. Indium tin oxide, alumni zinc oxide (AZO) and Al thin films serve as the source/drain (S/D) electrode. It turns out that devices with AZO S/D electrodes exhibit preferable properties such as a saturation mobility of 13.6 cm(2)/Vs, a subthreshold slope of 381 mV/decade, a Vth of 3.47 V and an on/off current ratio of 3.1 x 10(7). Moreover, the superior output characteristic and lower parasitic resistance demonstrate the excellent contact performance of the tin-zinc oxide TFTs with AZO S/D electrodes.; National Basic Research Program of China (973 Program) [2011CBA00600]; National Natural Science Foundation of China [61275025]; SCI(E); EI; ARTICLE; handedong@pku.edu.cn; 4; 302-303; 52
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/437671]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Yi,Han, Dedong,Huang, Lingling,et al. Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contacts[J]. ELECTRONICS LETTERS,2016.
APA	Zhang, Yi.,Han, Dedong.,Huang, Lingling.,Dong, Junchen.,Cong, Yingying.,...&Wang, Yi.(2016).Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contacts.ELECTRONICS LETTERS.
MLA	Zhang, Yi,et al."Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contacts".ELECTRONICS LETTERS (2016).