×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
北京大学 [4]
西安交通大学 [2]
苏州纳米技术与纳米仿... [2]
大连理工大学 [1]
内容类型
期刊论文 [8]
会议论文 [1]
发表日期
2019 [1]
2018 [1]
2017 [1]
2015 [1]
2014 [3]
2013 [1]
更多...
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共9条,第1-9条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure
期刊论文
ELECTRONICS, 2019, 卷号: 8
作者:
Huang, Huolin
;
Li, Feiyu
;
Sun, Zhonghao
;
Sun, Nan
;
Zhang, Feng
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/12/02
vertical field-effect transistor (VFET)
back current blocking layer (BCBL)
gallium nitride (GaN)
normally off power devices
Normally-off hydrogen-terminated diamond field-effect transistor with AL(2)O(3) dielectric layer formed by thermal oxidation of Al
期刊论文
DIAMOND AND RELATED MATERIALS, 2018, 卷号: 81, 页码: 113-117
作者:
Wang, Yan-Feng
;
Chang, Xiaohui
;
Zhang, Xiaofan
;
Fu, Jiao
;
Fan, Shuwei
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
Hydrogen-terminated
Diamond film
Normally-off
MOSFET
MPCVD
Switching Transient Analysis for Normally-Off GaN Transistors with p-GaN Gate in a Phase-Leg Circuit
会议论文
作者:
Xie, Ruiliang
;
Xu, Guangzhao
;
Yang, Xu
;
Wang, Hanxing
;
Tian, Mofan
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/11/26
switching transient analysis
p-GaN gate
phase-leg circuit
normally-off GaN transistor
Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2015, 卷号: 36, 期号: 11, 页码: 4
作者:
Zhang, ZL(张志利)
;
Fu, K(付凯)
;
Deng, XG(邓旭光)
;
Zhang, XD(张晓东)
;
Fan, YM(范亚明)
收藏
  |  
浏览/下载:66/0
  |  
提交时间:2015/12/31
AlGaN/GaN high electron mobility transistor (HEMT)
standard fluorine ion implantation
normally off
Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask
期刊论文
ieee electron device letters, 2014
Xu, Zhe
;
Wang, Jinyan
;
Liu, Jingqian
;
Jin, Chunyan
;
Cai, Yong
;
Yang, Zhenchuan
;
Wang, Maojun
;
Yu, Min
;
Xie, Bing
;
Wu, Wengang
;
Ma, Xiaohua
;
Zhang, Jincheng
;
Hao, Yue
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
Self-terminating
normally-off
AlGaN/GaN MOSFET
GaN cap layer
gate recess
recess mask
MODE
TRANSISTORS
INTERFACE
HFET
Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer
期刊论文
ieee electron device letters, 2014
Liu, Shenghou
;
Yang, Shu
;
Tang, Zhikai
;
Jiang, Qimeng
;
Liu, Cheng
;
Wang, Maojun
;
Chen, Kevin J.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/11/16
Al2O3/AlN/GaN
interfacial layer
normally off
MOS-channel-HEMT
recess
AL2O3/GAN MOSFET
PERFORMANCE
Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 12, 页码: 1197-1199
作者:
Cai, Y (蔡勇)
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2015/02/03
Self-terminating
normally-off
AlGaN/GaN MOSFET
GaN cap layer
gate recess
recess mask
Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique
期刊论文
ieee electron device letters, 2013
Xu, Zhe
;
Wang, Jinyan
;
Liu, Yang
;
Cai, Jinbao
;
Liu, Jingqian
;
Wang, Maojun
;
Yu, Min
;
Xie, Bing
;
Wu, Wengang
;
Ma, Xiaohua
;
Zhang, Jincheng
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/11/10
AlGaN/GaN MOSFET
gate recess
normally off
self-terminating
ENHANCEMENT-MODE
HEMTS
OXIDATION
GAN
Normally On/Off Integrated Latching Acceleration Switch With Controlled Fracture Beams and Independent Multicontact
期刊论文
ieee electron device letters, 2010
Guo, Zhongyang
;
Zhao, Qiancheng
;
Lin, Longtao
;
Yang, Zhenchuan
;
Xie, Huikai
;
Yan, Guizhen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
Acceleration switches
integrated
latching switches
microelectromechanical devices
normally OFF
normally ON
THRESHOLD
SILICON
©版权所有 ©2017 CSpace - Powered by
CSpace