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	Normally-off hydrogen-terminated diamond field-effect transistor with AL(2)O(3) dielectric layer formed by thermal oxidation of Al
	Wang, Yan-Feng; Chang, Xiaohui; Zhang, Xiaofan; Fu, Jiao; Fan, Shuwei; Bu, Renan; Zhang, Jingwen; Wang, Wei; Wang, Hong-Xing; Wang, Jingjing
刊名	DIAMOND AND RELATED MATERIALS
	2018
卷号	81页码:113-117
关键词	Hydrogen-terminated Diamond film Normally-off MOSFET MPCVD
ISSN号	0925-9635
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2923159
专题	西安交通大学
推荐引用方式 GB/T 7714	Wang, Yan-Feng,Chang, Xiaohui,Zhang, Xiaofan,et al. Normally-off hydrogen-terminated diamond field-effect transistor with AL(2)O(3) dielectric layer formed by thermal oxidation of Al[J]. DIAMOND AND RELATED MATERIALS,2018,81:113-117.
APA	Wang, Yan-Feng.,Chang, Xiaohui.,Zhang, Xiaofan.,Fu, Jiao.,Fan, Shuwei.,...&Wang, Jingjing.(2018).Normally-off hydrogen-terminated diamond field-effect transistor with AL(2)O(3) dielectric layer formed by thermal oxidation of Al.DIAMOND AND RELATED MATERIALS,81,113-117.
MLA	Wang, Yan-Feng,et al."Normally-off hydrogen-terminated diamond field-effect transistor with AL(2)O(3) dielectric layer formed by thermal oxidation of Al".DIAMOND AND RELATED MATERIALS 81(2018):113-117.

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