| Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure | |
| Huang, Huolin; Li, Feiyu; Sun, Zhonghao; Sun, Nan; Zhang, Feng; Cao, Yaqing; Zhang, Hui; Tao, Pengcheng | |
| 刊名 | ELECTRONICS
 |
| 2019 | |
| 卷号 | 8 |
| 关键词 | vertical field-effect transistor (VFET) back current blocking layer (BCBL) gallium nitride (GaN) normally off power devices |
| ISSN号 | 2079-9292 |
| URL标识 | 查看原文 |
| WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/3217177 |
| 专题 | 大连理工大学 |
| 作者单位 | 1.Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Key Lab Micro Nano Technol & Syst Liaoning Prov, Dalian 116024, Peoples R China. 3.Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China. 4.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.,Chinese Acad Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Inst Semicond, Beijing 100083, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Huang, Huolin,Li, Feiyu,Sun, Zhonghao,et al. Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure[J]. ELECTRONICS,2019,8. |
| APA | Huang, Huolin.,Li, Feiyu.,Sun, Zhonghao.,Sun, Nan.,Zhang, Feng.,...&Tao, Pengcheng.(2019).Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure.ELECTRONICS,8. |
| MLA | Huang, Huolin,et al."Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure".ELECTRONICS 8(2019). |
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