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CORC

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Impact of High TID Irradiation on Stability of 65 nm SRAM Cells 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050
作者:  Cui, JW (Cui, Jiangwei) [1];  Zheng, QW (Zheng, Qiwen) [1];  Li, YD (Li, Yudong) [1];  Guo, Q (Guo, Qi) [1]
收藏  |  浏览/下载：17/0  |  提交时间：2022/06/21
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1
收藏  |  浏览/下载：40/0  |  提交时间：2021/08/06
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1
收藏  |  浏览/下载：40/0  |  提交时间：2021/12/06
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:  Feng, HN (Feng, Haonan) [1] , [2] , [3];  Yang, S (Yang, Sheng) [1] , [2] , [3];  Liang, XW (Liang, Xiaowen) [1] , [2] , [3];  Zhang, D (Zhang, Dan) [1] , [2] , [3];  Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏  |  浏览/下载：41/0  |  提交时间：2022/03/24
TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 7, 页码: 1320-1325
作者:  Ren, ZX (Ren, Zhexuan)[ 1 ];  An, X (An, Xia)[ 1 ];  Li, GS (Li, Gensong)[ 1 ];  Chen, G (Chen, Gong)[ 1 ];  Li, M (Li, Ming)[ 1 ]
收藏  |  浏览/下载：35/0  |  提交时间：2020/09/09
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载：74/0  |  提交时间：2019/11/10
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ]
收藏  |  浏览/下载：99/0  |  提交时间：2019/05/14
Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors 期刊论文
IEEE Access, 2019, 卷号: Vol.7, 页码: 79989-79996
作者:  Shuyun Zheng;  Yun Zeng;  Zhuojun Chen
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/13
Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors 期刊论文
IEEE ACCESS, 2019, 卷号: Vol.7, 页码: 79989-79996
作者:  Zheng, SY;  Zeng, Y;  Chen, ZJ
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/17
Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 页码: 710-715
作者:  Shu, Lei;  Wang, Liang;  Zhou, Xin;  Li, Tong-De;  Yuan, Zhang-Yi'an
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/30

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