QQ客服 官方微博 反馈留言

浏览/检索结果: 共16条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文 thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230 Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan) 收藏  |  浏览/下载：41/0  |  提交时间：2010/12/28 Gallium Arsenide  Gallium antimonide  Gallium antimonide/Aluminum antimonide  Superlattices  Molecular Beam Epitaxy  VAPOR-PHASE EPITAXY  SURFACE-MORPHOLOGY  GROWTH  SUPERLATTICES  TEMPERATURE  RELAXATION  DETECTORS  GAAS(001)  MOCVD  FILMS   Superconductivity in Iron Telluride Thin Films under Tensile Stress 期刊论文 physical review letters, 104 (1): jan 8 2010, 2010, 卷号: 104, 期号: 1, 页码: art. no. 017003 作者:  Wang XY 收藏  |  浏览/下载：73/14  |  提交时间：2010/04/13 43 K  FESE  COMPOUND  PRESSURE   Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 376-380 Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY 收藏  |  浏览/下载：81/5  |  提交时间：2010/08/12 surface processes  molecular beam epitaxy  nitrides  semiconducting gallium compounds  GAN(0001) SURFACES  RECONSTRUCTIONS   Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy 期刊论文 physica status solidi a-applied research, 2001, 卷号: 188, 期号: 2, 页码: 681-685 Xu SJ; Or CT; Li Q; Zheng LX; Xie MH; Tong SY; Yang H 收藏  |  浏览/下载：79/12  |  提交时间：2010/08/12 OPTICAL-TRANSITIONS  PHOTOLUMINESCENCE   Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 surface processes  molecular beam epitaxy  nitrides  semiconducting gallium compounds  GAN(0001) SURFACES  RECONSTRUCTIONS   Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy 会议论文 4th international conference on nitride semiconductors (icns-4), denver, colorado, jul 16-20, 2001 Xu SJ; Or CT; Li Q; Zheng LX; Xie MH; Tong SY; Yang H 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 OPTICAL-TRANSITIONS  PHOTOLUMINESCENCE   The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 期刊论文 thin solid films, 2000, 卷号: 368, 期号: 2, 页码: 237-240 Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG 收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12 metalorganic chemical vapor deposition  cubic GaN  hexagonal phase content  4-circle X-ray double crystal diffraction  MOLECULAR-BEAM EPITAXY  GALLIUM NITRIDE  THIN-FILMS  SILICON  GAAS   Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching 期刊论文 thin solid films, 2000, 卷号: 372, 期号: 1-2, 页码: 25-29 作者:  Zhao DG;  Zhang SM 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  LIGHT-EMITTING-DIODES  YELLOW LUMINESCENCE  GROWTH  HETEROSTRUCTURE  NITRIDE   The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 会议论文 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 metalorganic chemical vapor deposition  cubic GaN  hexagonal phase content  4-circle X-ray double crystal diffraction  MOLECULAR-BEAM EPITAXY  GALLIUM NITRIDE  THIN-FILMS  SILICON  GAAS   Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates 期刊论文 journal of crystal growth, 2000, 卷号: 212, 期号: 3-4, 页码: 397-401 作者:  Zhao DG 收藏  |  浏览/下载：34/0  |  提交时间：2010/08/12 III-V semiconductor MOCVD RHEED  XRDCD  SAPPHIRE