Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

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	Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
	Hao RT (Hao Ruiting) ; Deng SK (Deng Shukang) ; Shen LX (Shen Lanxian) ; Yang PZ (Yang Peizhi) ; Tu JL (Tu Jielei) ; Liao H (Liao Hua) ; Xu YQ (Xu Yingqiang) ; Niu ZC (Niu Zhichuan)
刊名	thin solid films
	2010
卷号	519 期号:1 页码:228-230
关键词	Gallium Arsenide Gallium antimonide Gallium antimonide/Aluminum antimonide Superlattices Molecular Beam Epitaxy VAPOR-PHASE EPITAXY SURFACE-MORPHOLOGY GROWTH SUPERLATTICES TEMPERATURE RELAXATION DETECTORS GAAS(001) MOCVD FILMS
通讯作者	hao, rt, yunnan normal univ, inst solar energy, key lab renewable energy adv mat & mfg technol, educ minist, kunming 650092, yunnan province, peoples r china. ruitinghao@semi.ac.cn
合作状况	其它
英文摘要	gasb films with alsb/gasb compound buffer layers were grown by molecular beam epitaxy on gaas (001) substrates. the crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (pl), respectively. it was found that the alsb/gasb compound buffer layers can restrict the dislocations into gasb epilayers. the intensity of pl spectra of gasb layer becomes large with the increasing the periods of alsb/gasb superlattices, indicating that the optical quality of gasb films is improved.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-28t00:34:28z no. of bitstreams: 1 molecular beam epitaxy of gasb on gaas substrates with alsb-gasb compound buffer layers.pdf: 810047 bytes, checksum: ae976c06e0fe32c8911387e5b9adae6a (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-28t00:59:37z (gmt) no. of bitstreams: 1 molecular beam epitaxy of gasb on gaas substrates with alsb-gasb compound buffer layers.pdf: 810047 bytes, checksum: ae976c06e0fe32c8911387e5b9adae6a (md5); made available in dspace on 2010-12-28t00:59:37z (gmt). no. of bitstreams: 1 molecular beam epitaxy of gasb on gaas substrates with alsb-gasb compound buffer layers.pdf: 810047 bytes, checksum: ae976c06e0fe32c8911387e5b9adae6a (md5) previous issue date: 2010; this work is supported by the national natural science foundation of china (grant nos.: 60607016, 60625405), the national basic research program of china (grant no.: 2007cb936304) and the natural science foundation of yunnan province (grant nos.: 2009cd045 2007e197m).; 其它
学科主题	半导体材料
收录类别	SCI
资助信息	this work is supported by the national natural science foundation of china (grant nos.: 60607016, 60625405), the national basic research program of china (grant no.: 2007cb936304) and the natural science foundation of yunnan province (grant nos.: 2009cd045 2007e197m).
语种	英语
公开日期	2010-12-28 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20681]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Hao RT ,Deng SK ,Shen LX ,et al. Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers[J]. thin solid films,2010,519(1):228-230.
APA	Hao RT .,Deng SK .,Shen LX .,Yang PZ .,Tu JL .,...&Niu ZC .(2010).Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers.thin solid films,519(1),228-230.
MLA	Hao RT ,et al."Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers".thin solid films 519.1(2010):228-230.