The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

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	The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition
	Sun XL ; Wang YY ; Yang H ; Li JB ; Zheng LX ; Xu DP ; Wang ZG
刊名	thin solid films
	2000
卷号	368 期号:2 页码:237-240
关键词	metalorganic chemical vapor deposition cubic GaN hexagonal phase content 4-circle X-ray double crystal diffraction MOLECULAR-BEAM EPITAXY GALLIUM NITRIDE THIN-FILMS SILICON GAAS
ISSN号	0040-6090
通讯作者	sun xl,chinese acad sci,inst semicond,natl res ctr optoelect technol,beijing 100083,peoples r china.
中文摘要	cubic gan(c-gan) films are grown on gaas(001) substrates by metalorganic chemical vapor deposition (mocvd). two gan samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle x-ray double crystal diffraction (xrdcd) was used to study the secondary crystallographic phases presented in the c-gan films. the phase composition of the epilayers was determined by x-ray reciprocal space mapping. the intensities of the c-gan(002) and h-gan(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. the content of the hexagonal phase inclusions in the c-gan films was calculated to about 1.6 and 7.9%, respectively. the thicker buffer layer is not preferable for growing high quality pure c-gan films. (c) 2000 elsevier science s.a. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12548]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun XL,Wang YY,Yang H,et al. The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition[J]. thin solid films,2000,368(2):237-240.
APA	Sun XL.,Wang YY.,Yang H.,Li JB.,Zheng LX.,...&Wang ZG.(2000).The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition.thin solid films,368(2),237-240.
MLA	Sun XL,et al."The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition".thin solid films 368.2(2000):237-240.