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期刊论文 [19]
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Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhou, Xiaoliang
;
Shao, Yang
;
Zhang, Letao
;
Xiao, Xiang
;
Han, Dedong
;
Wang, Yi
;
Zhang, Shengdong
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/03
Amorphous oxide semiconductor
thinfilm transistors
oxygen adsorption
surface-state model
OXIDE
ZNO
WATER
Indium-Tin-Oxide Thin-Film Transistors With In Situ Anodized Ta2O5 Passivation Layer
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016
Le, Yong
;
Shao, Yang
;
Xiao, Xiang
;
Xu, Xin
;
Zhang, Shengdong
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
Indium tin oxide (ITO)
thin-film transistors (TFTs)
anodization
back channel passivation
STABILITY
CHANNEL
Investigation into sand mura effects of a-IGZO TFT LCDs
期刊论文
MICROELECTRONICS RELIABILITY, 2016
Liu, Xiang
;
Hu, Hehe
;
Ning, Ce
;
Shang, Guangliang
;
Yang, Wei
;
Wang, Ke
;
Lu, Xinhong
;
Lee, Woobong
;
Wang, Gang
;
Xue, Jianshe
;
Jun, Jung Mok
;
Zhang, Shengdong
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2017/12/03
a-IGZO TFTs
LCD reliability test
Sand mura
Threshold voltage shift
Positive
Thermal gate bias stress
THIN-FILM TRANSISTORS
Low Power High Performance FinFET Standard Cells Based on Mixed Back Biasing Technology
期刊论文
IEICE TRANSACTIONS ON ELECTRONICS, 2016
Wang, Tian
;
Cui, Xiaoxin
;
Liao, Kai
;
Liao, Nan
;
Cui, Xiaole
;
Yu, Dunshan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/04
VLSI
FinFET
standard cell
stacking
back biasing
REDUCTION
Back Channel Anodization Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Process
期刊论文
ieee electron device letters, 2015
Xiao, Xiang
;
Shao, Yang
;
He, Xin
;
Deng, Wei
;
Zhang, Letao
;
Zhang, Shengdong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/11
Amorphous indium gallium zinc oxide (a-IGZO)
thin-film transistors (TFTs)
back channel anodization (BCA)
low temperature
Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O-2 Plasma Treatment
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2015
Liu, Xiang
;
Wang, Lisa Ling
;
Hu, Hehe
;
Lu, Xinhong
;
Wang, Ke
;
Wang, Gang
;
Zhang, Shengdong
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
a-IGZO TFTs
back-channel-etch (BCE)
plasma treatment
threshold voltage shift
THRESHOLD VOLTAGE
SHIFT
OXIDE
GATE
Single-ZnO-Nanobelt-Based Single-Electron Transistors
期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 6
Ji, XF
;
Xu, Z
;
Cao, S
;
Qiu, KS
;
Tang, J
;
Zhang, XT
;
Xu, XL
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2015/04/14
Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SOI (ETSOI) MOSFETs
期刊论文
IEEE Electron device letters, 2014
作者:
Yan J(闫江)
;
Tang ZY(唐兆云)
;
Tang B(唐波)
;
Zhao LC(赵利川)
;
Zhao C(赵超)
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2015/04/24
Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX
期刊论文
ieee电子器件汇刊, 2013
Yang, Yunxiang
;
Markov, Stanislav
;
Cheng, Binjie
;
Zain, Anis Suhaila Mohd
;
Liu, Xiaoyan
;
Asenov, Asen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/13
Back-gate bias
line edge roughness (LER)
metal gate granularity (MGG)
random dopant fluctuation (RDF)
statistical variability (SV)
thin buried oxide (BOX)
INTRINSIC PARAMETER FLUCTUATIONS
SIMULATION
DECANANOMETER
IMPACT
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