Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SOI (ETSOI) MOSFETs

	Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SOI (ETSOI) MOSFETs
	Yan J(闫江); Tang ZY(唐兆云); Tang B(唐波); Zhao LC(赵利川); Zhao C(赵超); Ye TC(叶甜春); Wang GL(王桂磊); Xu J(许静); Wang HL(王红丽); Wang DH(王大海)
刊名	IEEE Electron device letters
	2014
公开日期	2015-04-24
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/12720]
专题	微电子研究所_集成电路先导工艺研发中心
通讯作者	Tang ZY(唐兆云)
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Yan J,Tang ZY,Tang B,et al. Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SOI (ETSOI) MOSFETs[J]. IEEE Electron device letters,2014.
APA	Yan J.,Tang ZY.,Tang B.,Zhao LC.,Zhao C.,...&Li JF.(2014).Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SOI (ETSOI) MOSFETs.IEEE Electron device letters.
MLA	Yan J,et al."Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SOI (ETSOI) MOSFETs".IEEE Electron device letters (2014).