Back-Gate Bias Dependence of the Statistical Variability of FDSOI   MOSFETs With Thin BOX

doi:10.1109/TED.2012.2233203

CORC > 北京大学 > 信息科学技术学院

	Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX
	Yang, Yunxiang ; Markov, Stanislav ; Cheng, Binjie ; Zain, Anis Suhaila Mohd ; Liu, Xiaoyan ; Asenov, Asen
刊名	ieee电子器件汇刊
	2013
关键词	Back-gate bias line edge roughness (LER) metal gate granularity (MGG) random dopant fluctuation (RDF) statistical variability (SV) thin buried oxide (BOX) INTRINSIC PARAMETER FLUCTUATIONS SIMULATION DECANANOMETER IMPACT
DOI	10.1109/TED.2012.2233203
英文摘要	The impact of back-gate bias on the statistical variability (SV) of FDSOI MOSFETs with thin buried oxide (BOX) is studied via 3-D "atomistic" drift-diffusion simulation. The impact of the principal sources of SV, i.e., random dopant fluctuations, line edge roughness, and metal gate granularity, on threshold voltage, drain-induced barrier lowering, and drive current is studied in detail. It is shown that reverse back-bias is beneficial in terms of reducing the dispersion of the OFF-current and the corresponding standby leakage power, whereas forward back-bias reduces the ON-current variability. The correlation coefficients between relevant figures of merit and their trends against back-bias are also studied in detail, providing guidelines for the development of statistical compact models of thin-BOX FDSOI MOSFETs for low-standby-power circuit applications.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000316817900029&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); EI; 4; ARTICLE; 2,SI; 739-745; 60
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291772]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yang, Yunxiang,Markov, Stanislav,Cheng, Binjie,et al. Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX[J]. ieee电子器件汇刊,2013.
APA	Yang, Yunxiang,Markov, Stanislav,Cheng, Binjie,Zain, Anis Suhaila Mohd,Liu, Xiaoyan,&Asenov, Asen.(2013).Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX.ieee电子器件汇刊.
MLA	Yang, Yunxiang,et al."Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX".ieee电子器件汇刊 (2013).