Single-ZnO-Nanobelt-Based Single-Electron Transistors

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	Single-ZnO-Nanobelt-Based Single-Electron Transistors
	Ji, XF ; Xu, Z ; Cao, S ; Qiu, KS ; Tang, J ; Zhang, XT ; Xu, XL
刊名	CHINESE PHYSICS LETTERS
	2014
卷号	31 期号:6
ISSN号	0256-307X
通讯作者	Xu, Z (reprint author), Beijing Jiaotong Univ, Inst Optoelect Technol, Beijing 100044, Peoples R China.
中文摘要	We fabricate single electron transistors based on a single ZnO nanobelt using standard micro-fabrication techniques. The transport properties of the devices are characterized at room temperature and at low temperature (4.2 K). At room temperature, the source-drain current increases linearly as the bias voltage increases, indicating a good ohmic contact in the transistors. At 4.2 K, a Coulomb blockade regime is observed up to a bias voltage of a few millivolts. With scanning the back gate voltage, Coulomb oscillations can be clearly resolved with a period around 1 V. From the oscillations, the charging energy for the single electron transistor is calculated to be about 10 meV, which suggests that confined quantum dots exist with sizes around 35 nm in diameter. The irregular Coulomb diamonds are observed due to the multi-tunneling junctions between dots in the nanobelt.
资助信息	National Basic Research Program of China [2013CB328706, 2014CB921003, 2010CB327704]; National Natural Science Foundation of China [11174356, 61275060, 51272022]; Strategic Priority Research Program of the Chinese Academy of Sciences [XDB07030200]; Hundred Talents Program of the Chinese Academy of Sciences; New Century Excellent Talents in University of Ministry of Education of China [NCET-10-0220]; Specialized Research Fund for the Doctoral Program of Higher Education of China [20120009130005]; Fundamental Research Funds for the Central Universities [2012JBZ001]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59033]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Ji, XF,Xu, Z,Cao, S,et al. Single-ZnO-Nanobelt-Based Single-Electron Transistors[J]. CHINESE PHYSICS LETTERS,2014,31(6).
APA	Ji, XF.,Xu, Z.,Cao, S.,Qiu, KS.,Tang, J.,...&Xu, XL.(2014).Single-ZnO-Nanobelt-Based Single-Electron Transistors.CHINESE PHYSICS LETTERS,31(6).
MLA	Ji, XF,et al."Single-ZnO-Nanobelt-Based Single-Electron Transistors".CHINESE PHYSICS LETTERS 31.6(2014).